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Method of fabrication of highly resistive GaN bulk crystals 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-009/00
출원번호 US-0445169 (1999-12-06)
우선권정보 PL0320392 (1997-06-05)
국제출원번호 PCT/PL98/00023 (1998-06-03)
§371/§102 date 19991206 (19991206)
국제공개번호 WO-9855671 (1998-12-10)
발명자 / 주소
  • Porowski Sylwester,PLX
  • Bockowski Michal,PLX
  • Grzegory Izabella,PLX
  • Krukowski Stanislaw,PLX
  • Leszczynski Michal,PLX
  • Lucznik Boleslaw,PLX
  • Suski Tadeusz,PLX
  • Wroblewski Miroslaw,PLX
출원인 / 주소
  • Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk, PLX
대리인 / 주소
    Kasper
인용정보 피인용 횟수 : 62  인용 특허 : 2

초록 ▼

The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration

대표청구항 ▼

[ We claim:] [1.]1. A method for fabrication of highly resistive GaN bulk crystals comprisingmelting a mixture of semiconductor purity metals, containing gallium in the concentration not lower than 90 atomic percent and a metal selected from the group consisting of beryllium, calcium and mixtures th

이 특허에 인용된 특허 (2)

  1. Porowski Sylwester (Warsaw PLX) Jun Jan (Warsaw PLX) Grzegory Izabella (Warsaw PLX) Krukowski Stanislaw (Warsaw PLX) Wroblewski Miroslaw (Warsaw PLX), Method of making a crystalline multilayer structure at two pressures the second one lower than first.
    상세보기
  2. Tanaka Motoyuki,JPX ; Sogabe Kouichi,JPX, Single crystal of nitride and process for preparing the same.
    상세보기

이 특허를 인용한 특허 (62)

  1. Pakalapati, Rajeev Tirumala; D'Evelyn, Mark P., Apparatus for high pressure reaction.
    상세보기
  2. Rajeev, Pakalapati Tirumala; Pocius, Douglas W.; D'Evelyn, Mark P., Apparatus for large volume ammonothermal manufacture of gallium nitride crystals and methods of use.
    상세보기
  3. D'Evelyn, Mark Philip; Giddings, Robert Arthur; Sharifi, Fred; Dey, Subhrajit; Hong, Huicong; Kapp, Joseph Alexander; Khare, Ashok Kumar, Apparatus for processing materials in supercritical fluids and methods thereof.
    상세보기
  4. D'Evelyn,Mark Philip; Park,Dong Sil; Lou,Victor Lienkong; McNulty,Thomas Francis; Hong,Huicong, Apparatus for producing single crystal and quasi-single crystal, and associated method.
    상세보기
  5. Tischler, Michael A.; Kuech, Thomas F.; Vaudo, Robert P., Bulk single crystal gallium nitride and method of making same.
    상세보기
  6. Tischler,Michael A.; Kuech,Thomas F.; Vaudo,Robert P., Bulk single crystal gallium nitride and method of making same.
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  7. Rajeev, Pakalapati Tirumala; Pocius, Douglas Wayne; Kamber, Derrick S.; Coulter, Michael, Capsule for high pressure, high temperature processing of materials and methods of use.
    상세보기
  8. D'Evelyn, Mark Philip; Park, Dong Sil; LeBoeuf, Steven Francis; Rowland, Larry Burton; Narang, Kristi Jean; Hong, Huicong; Arthur, Stephen Daley; Sandvik, Peter Micah, Crystalline composition, wafer, and semi-conductor structure.
    상세보기
  9. D'Evelyn, Mark Philip; Park, Dong-Sil; LeBoeuf, Steven Francis; Rowland, Larry Burton; Narang, Kristi Jean; Hong, Huicong; Arthur, Stephen Daley; Sandvik, Peter Micah, Crystalline composition, wafer, device, and associated method.
    상세보기
  10. Raring, James W.; Rudy, Paul; Khosla, Vinod; Lamond, Pierre; Denbaars, Steven P.; Nakamura, Shuji; Ogawa, Richard T., Gallium and nitrogen containing laser diode dazzling devices and methods of use.
    상세보기
  11. Raring, James W.; Rudy, Paul; Khosla, Vinod; Lamond, Pierre; Denbaars, Steven P.; Nakamura, Shuji; Ogawa, Richard T., Gallium and nitrogen containing laser diode dazzling devices and methods of use.
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  12. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling device and method.
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  13. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling device and method.
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  14. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling method.
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  15. D'Evelyn, Mark Philip; Park, Dong-Sil; LeBoeuf, Steven Francis; Rowland, Larry Burton; Narang, Kristi Jean; Hong, Huicong; Sandvik, Peter Micah, Gallium nitride crystal and method of making same.
    상세보기
  16. D'Evelyn,Mark Philip; Park,Dong Sil; LeBoeuf,Steven; Rowland,Larry; Narang,Kristi; Hong,Huicong; Sandvik,Peter M., Gallium nitride crystal and method of making same.
    상세보기
  17. D'Evelyn, Mark Philip; Park, Dong-Sil; LeBoeuf, Steven Francis; Rowland, Larry Burton; Narang, Kristi Jean; Hong, Huicong; Arthur, Stephen Daley; Sandvik, Peter Micah, Gallium nitride crystals and wafers and method of making.
    상세보기
  18. D'Evelyn,Mark Philip; Park,Dong Sil; LeBoeuf,Steven Francis; Rowland,Larry Burton; Narang,Kristi Jean; Hong,Huicong; Arthur,Stephen Daley; Sandvik,Peter Micah, Gallium nitride crystals and wafers and method of making.
    상세보기
  19. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward; Tsvetkov, Denis; Williams, N. Mark; Xu, Xueping, Group III nitride articles and methods for making same.
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  20. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward; Tsvetkov, Denis; Williams, N. Mark; Xu, Xueping, Group III nitride articles having nucleation layers, transitional layers, and bulk layers.
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  21. Hashimoto, Tadao; Letts, Edward, Group III nitride bulk crystals and their fabrication method.
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  22. Hashimoto, Tadao; Letts, Edward, Group III nitride bulk crystals and their fabrication method.
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  23. D'Evelyn,Mark Philip; Cao,Xian An; Zhang,Anping; LeBoeuf,Steven Francis; Hong,Huicong; Park,Dong Sil; Narang,Kristi Jean, Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates.
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  24. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
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  25. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
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  26. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
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  27. D'Evelyn,Mark P.; Leonelli, Jr.,Robert V.; Allison,Peter S.; Narang,Kristi J.; Giddings,Robert A., High pressure/high temperature apparatus with improved temperature control for crystal growth.
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  28. Jiang, Wenkan; D'Evelyn, Mark P.; Kamber, Derrick S.; Ehrentraut, Dirk; Krames, Michael, High quality group-III metal nitride crystals, methods of making, and methods of use.
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  29. D'Evelyn, Mark Philip; Narang, Kristi Jean; Giddings, Robert Arthur; Tysoe, Steven Alfred; Lucek, John William; Vagarali, Suresh Shankarappa; Leonelli, Jr., Robert Vincent; Dysart, Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
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  30. D'Evelyn, Mark Phillip; Evers, Nicole Andrea; Zhang, An-Ping; Tucker, Jesse Berkley; Fedison, Jeffrey Bernard, Homoepitaxial gallium-nitride-based electronic devices and method for producing same.
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  31. Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same.
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  32. Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same.
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  33. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
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  34. D'Evelyn, Mark P.; Jiang, Wenkan; Kamber, Derrick S.; Pakalapati, Rajeev T.; Krames, Michael R., Large area seed crystal for ammonothermal crystal growth and method of making.
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  35. D'Evelyn, Mark P.; Ehrentraut, Dirk; Jiang, Wenkan; Downey, Bradley C., Large area, low-defect gallium-containing nitride crystals, method of making, and method of use.
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  36. Raring, James W.; Rudy, Paul, Laser device and method for a vehicle.
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  37. Raring, James W.; Rudy, Paul, Laser device and method for a vehicle.
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  38. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, MIIIN based materials and methods and apparatus for producing same.
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  39. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon.
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  40. Friedrich, Jochen; Muller, Georg; Meissner, Elke; Birkmann, Bernhard; Hussy, Stephan, Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements.
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  41. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward A.; Tsvetkov, Denis; Williams, Nathaniel Mark; Xu, Xueping, Method for making group III nitride articles.
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  42. Jiang, Wenkan; Ehrentraut, Dirk; Downey, Bradley C.; D'Evelyn, Mark P., Method for quantification of extended defects in gallium-containing nitride crystals.
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  43. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
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  44. D'Evelyn, Mark Philip; Narang, Kristi Jean; Park, Dong-Sil; Hong, Huicong; Cao, Xian-An; Zeng, Larry Qiang, Method of making a gallium nitride crystalline composition having a low dislocation density.
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  45. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
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  46. Cuomo, Jerome J.; Williams, N. Mark, Non-thermionic sputter material transport device, methods of use, and materials produced thereby.
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  47. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
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  48. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
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  49. Iwai, Makoto; Higashihara, Shuhei; Sasaki, Takatomo; Mori, Yusuke; Kawamura, Fumio, Process and apparatus for producing nitride single crystal.
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  50. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
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  51. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
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  52. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules.
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  53. Hashimoto, Tadao; Letts, Edward; Key, Daryl, Seed selection and growth methods for reduced-crack group III nitride bulk crystals.
    상세보기
  54. Vaudo,Robert P.; Xu,Xueping; Brandes,George R., Semi-insulating GaN and method of making the same.
    상세보기
  55. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
    상세보기
  56. Minemoto, Hisashi; Kitaoka, Yasuo; Kawaguchi, Yasutoshi; Takahashi, Yasuhito; Hasegawa, Yoshiaki, Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate.
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  57. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  58. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  59. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  60. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  61. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
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  62. Alexander, Alex; Nink, Jr., John W.; D'Evelyn, Mark P., Ultrapure mineralizers and methods for nitride crystal growth.
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