초록 ▼

A method of depositing material on a substrate using a shadow mask. The mask includes a plurality of etched features which correspond to a plurality of features in the substrate. Spheres are provided in the features of the mask or substrate so that the mask and substrate are aligned when each of the

A method of depositing material on a substrate using a shadow mask. The mask includes a plurality of etched features which correspond to a plurality of features in the substrate. Spheres are provided in the features of the mask or substrate so that the mask and substrate are aligned when each of the spheres occupy both of the corresponding features in the mask and substrate.

대표청구항 ▼

[ The invention claimed is:] [1.]1. A method of depositing a material on a substrate comprising the steps of:providing a semiconductor mask with an aperture for defining an area of the substrate to be covered by the material, the mask further comprising a first plurality of pyramidal etched features

[ The invention claimed is:] [1.]1. A method of depositing a material on a substrate comprising the steps of:providing a semiconductor mask with an aperture for defining an area of the substrate to be covered by the material, the mask further comprising a first plurality of pyramidal etched features with sidewalls in a surface of the mask;forming a second plurality of pyramidal shaped features with sidewalls in a surface of the substrate corresponding to the first plurality of features;mounting spheres in some of the plurality of features so that die spheres make physical contact with the sidewalls; positioning the mask so that the surfaces of the mask and substrate are facing one another, and moving the mask relative to the substrate until each sphere is positioned to contact the sidewalls in corresponding features in both the mask and substrate so that the mask is aligned with the substrate producing a registration within the range +/-5 microns; anddepositing the material through the aperture in the mask.