초록 ▼

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, sp

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprising the steps of:spinning on a substrate a first layer of dielectric to a first thickness;imidizing said first layer of dielectric;forming a first metal pat

[ What is claimed is:] [1.]1. A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprising the steps of:spinning on a substrate a first layer of dielectric to a first thickness;imidizing said first layer of dielectric;forming a first metal pattern on said first layer of dielectric;spinning on said metal pattern a second layer of dielectric to a second thickness;imidizing said second layer of dielectric; andremoving said substrate. [27.]27. A method of manufacturing a flexible metallic photonic band gap structure, comprising the steps of:providing a GaAs substrate;applying a bottom encapsulation layer of polyimide dielectric to said substrate;forming a first metal pattern on said bottom encapsulation layer;applying a first polyimide dielectric separation layer on said first metal pattern;forming a second metal pattern on said first separation layer;applying a second polyimide dielectric separation layer on said second metal pattern;forming a third metal pattern on said second separation layer;applying a top encapsulation layer of polyimide dielectric on said third metal pattern; andremoving said substrate from said bottom encapsulation layer, resulting in the flexible metallic photonic band gap structure.