초록 ▼

A method for implanting a substrate face using a plasma processing apparatus (10). The method includes providing a substrate (e.g., wafer, panel) (22) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends from a first edge of the substrate to a seco

A method for implanting a substrate face using a plasma processing apparatus (10). The method includes providing a substrate (e.g., wafer, panel) (22) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends from a first edge of the substrate to a second edge of the substrate across a length of the substrate. The method also includes forming a plasma sheath (26) around the face of the substrate. The plasma sheath has a dark space distance "D" that extends in a normal manner from the exposed face to an edge of the plasma sheath. The dark space distance and the substrate diameter comprise a ratio between the dark space distance and the substrate diameter. The ratio is about one half and less, which provides a substantially uniform implant.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for implanting a substrate face using a plasma processing apparatus, said method comprising:providing a substrate on a face of a susceptor, said face of said susceptor comprising a portion that extends outside of a diameter of said substrate, said substrate hav

[ What is claimed is:] [1.]1. A method for implanting a substrate face using a plasma processing apparatus, said method comprising:providing a substrate on a face of a susceptor, said face of said susceptor comprising a portion that extends outside of a diameter of said substrate, said substrate having an exposed face, said exposed face comprising a substrate diameter that extends from a first edge of said substrate to a second edge of said substrate across a length of said substrate;forming a plasma sheath comprising hydrogen ions around said face of said substrate, said plasma sheath comprising a dark space distance that extends in a normal manner from said exposed face to an edge of said plasma sheath; andapplying a voltage potential between said plasma sheath and said substrate to accelerate said hydrogen ions through said exposed face to a selected depth;wherein said dark space distance and said substrate diameter comprise a ratio between said dark space distance and said substrate diameter, said ratio being at about one half and less within substantially a first portion of said exposed face;wherein said substrate is maintained in an environment at a pressure of about 1 millitorr and less to reduce a possibility of a collision between at least one of said hydrogen ions and a neutral; andwherein said substrate is maintained at a temperature of about 205.degree. Celsius and less to prevent a possibility of said implanted hydrogen ions from diffusing out of said substrate. [5.]5. The method of claim 1 wherein said portion is about twenty five percent or greater of said substrate diameter.