$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Apparatus and method for electrolytically depositing copper on a semiconductor workpiece 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-005/10
출원번호 US-0387099 (1999-08-31)
발명자 / 주소
  • Chen LinLin
출원인 / 주소
  • Semitool, Inc.
대리인 / 주소
    Christensen O'Connor Johnson Kindess PLLC
인용정보 피인용 횟수 : 92  인용 특허 : 18

초록

This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material,

대표청구항

[ What is claimed is:] [1.]1. A process for applying a metal structure to a workpiece comprising:providing a first electroplating bath including a source of metal ions as a principal metal species to be deposited during subsequent electroplating, boric acid, and a metal ion complexing agent;providin

이 특허에 인용된 특허 (18)

  1. Batchelder William T. (San Mateo CA), Apparatus and method for spin coating wafers and the like.
  2. Herr Roy W. (Troy MI), Electrolyte and method for electrodepositing bright metal deposits.
  3. Eckles, William E., Electroplating baths, additives therefor and methods for the electrodeposition of metals.
  4. Hahne Ellen L. (Westfield NJ) Maxemchuk Nicholas F. (Mountainside NJ), Fair access of multi-priority traffic to distributed-queue dual-bus networks.
  5. Beetz ; Jr. Charles P. ; Steinbeck John ; Boerstler Robert W. ; Winn David R., Magnetic memory having shape anisotropic magnetic elements.
  6. Farooq Mukta S. (Hopewell Junction NY) Kaja Suryanarayana (Hopewell Junction NY) Perfecto Eric D. (Poughkeepsie NY) White George E. (Hoffman Estates IL), Method for forming capped copper electrical interconnects.
  7. Dubin Valery ; Nogami Takeshi, Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate.
  8. Polichette Joseph (South Farmingdale NY) Leech Edward J. (Oyster Bay NY), Method for the production of radiant energy imaged printed circuit boards.
  9. Weaver Charles A. (Indianapolis IN), Method of electroplating a conductive layer over an electrolytic capacitor.
  10. Matsunami Takashi,JPX ; Ikeda Masahiko,JPX ; Oka Hiroyuki,JPX, Method of electroplating non-conductive materials.
  11. Nomura Takuji (Otsu JPX) Watanabe Hiroshi (Sagamihara JPX), Method of plating a bonded magnet and a bonded magnet carrying a metal coating.
  12. Reynolds H. Vincent, Plating cell with horizontal product load mechanism.
  13. Blackwell Kim J. (Owego NY) Matienzo Luis J. (Endicott NY) Knoll Allan R. (Endicott NY), Process for creating organic polymeric substrate with copper.
  14. Makkaev Almaxud M. (ulitsa Zolotodolinskaya ; 29 ; kv. 308 Novosibirsk SUX) Lomovsky Oleg I. (ulitsa Ostrovskogo ; 101a ; kv. 22 Berdsk Novosibirskoi oblasti SUX) Mikhailov Jury I. (ulitsa Maltseva ;, Process for electrochemical metallization of dielectrics.
  15. Gilton Terry L. (Boise ID) Tuttle Mark E. (Boise ID) Cathey David A (Boise ID), Process for metallizing integrated circuits with electrolytically-deposited copper.
  16. Ahmad Umar M. (Hopewell Junction NY) Berger Daniel G. (Poughkeepsie NY) Kumar Ananda (Hopewell Junction NY) LaMaire Susan J. (Yorktown Heights NY) Prasad Keshav B. (New Paltz NY) Ray Sudipta K. (Wapp, Selective plating method for forming integral via and wiring layers.
  17. Cabral ; Jr. Cyril (Ossining NY) Colgan Evan George (Suffern NY) Grill Alfred (White Plains NY), Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal.
  18. Shimauchi Hidenori (Takatsuki JPX) Suzuki Keijiro (Tokyo JPX), Tin whisker-free tin or tin alloy plated article and coating technique thereof.

이 특허를 인용한 특허 (92)

  1. Woodruff, Daniel J.; Hanson, Kyle M.; Eudy, Steve L.; Weber, Curtis A.; Harris, Randy, Adaptable electrochemical processing chamber.
  2. Shalyt, Eugene; Ososkov, Victor; Pavlov, Michael; Bratin, Peter, Analysis of copper ion and complexing agent in copper plating baths.
  3. Yang, Michael X.; Kovarsky, Nicolay Y., Anolyte for copper plating.
  4. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  5. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  6. Peace, Steven L., Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids.
  7. Hanson,Kyle M., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  8. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  9. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  10. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Ellwanger, Russell; Pancham, Ian A.; Cheboli, Ramakrishna; Weidman, Timothy W., Apparatus for electroless deposition of metals onto semiconductor substrates.
  11. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Pancham, Ian A., Apparatus for electroless deposition of metals onto semiconductor substrates.
  12. Hanson, Kyle M.; Klocke, John L., Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  13. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  14. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  15. Weidman, Timothy W.; Wijekoon, Kapila P.; Zhu, Zhize; Gelatos, Avgerinos V. (Jerry); Khandelwal, Amit; Shanmugasundram, Arulkumar; Yang, Michael X.; Mei, Fang; Moghadam, Farhad K., Contact metallization scheme using a barrier layer over a silicide layer.
  16. Han,Jae Won, Deposition stop time detection apparatus and methods for fabricating copper using the same.
  17. Han,Jae Won, Deposition stop time detection apparatus and methods for fabricating copper wiring using the same.
  18. Sprague, Robert A.; Chan, Bryan Hans; Lin, Craig; Pham, Tin; Peri, Manasa, Display device assembly.
  19. Sprague, Robert A.; Chan, Bryan Hans; Lin, Craig, Display device assembly and manufacture thereof.
  20. Sprague, Robert A.; Lin, Craig, Display device with a brightness enhancement structure.
  21. Sprague, Robert A.; Chaug, Yi-Shung; Zang, HongMei; Wang, Xiaojia; Kang, Gary, Display devices having micro-reflectors.
  22. Sprague, Robert A.; Chaug, Yi-Shung; Zang, HongMei; Wang, Xiaojia; Kang, Gary, Display devices having micro-reflectors and color filters.
  23. Ho, Andrew; Chan, Bryan; Lin, Craig; Sprague, Robert A., Display devices with grooved luminance enhancement film.
  24. Guarnaccia, David; Keigler, Arthur; Papapanayiotou, Demetrius; Chiu, Johannes, Electro chemical deposition and replenishment apparatus.
  25. Papapanayiotou, Demetrius; Keigler, Arthur; Guarnaccia, David; Hander, Jonathan; Chiu, Johannes, Electro chemical deposition and replenishment apparatus.
  26. Keigler, Arthur; Guarnaccia, David; Papapanayiotou, Demetrius; Hander, Jonathan, Electrochemical deposition apparatus with remote catholyte fluid management.
  27. Baek, Seung Min; Kim, Yoon Su; Yang, Jin Hyuck; Lee, Chang Bae, Electrode structure.
  28. Subramani,Anantha K.; Vesci,Anthony; Dickerson,Scott, Electroformed sputtering target.
  29. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  30. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Thomas L.; Klocke, John Lee; Hanson, Kyle M., Electrolytic copper process using anion permeable barrier.
  31. Baskaran, Rajesh; Batz, Jr., Robert W; Kim, Bioh; Ritzdorf, Tom L; Klocke, John L; Hanson, Kyle M, Electrolytic copper process using anion permeable barrier.
  32. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Tom L.; Klocke, John Lee; Hanson, Kyle M., Electrolytic process using anion permeable barrier.
  33. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Tom L.; Klocke, John L.; Hanson, Kyle M., Electrolytic process using cation permeable barrier.
  34. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Tom L.; Klocke, John L.; Hanson, Kyle M., Electrolytic process using cation permeable barrier.
  35. Shirakashi, Mitsuhiko; Kumekawa, Masayuki; Yasuda, Hozumi; Kobata, Itsuki; Noji, Ikutaro; Yoshida, Kaori, Electrolytic processing apparatus and substrate processing apparatus and method.
  36. Farrar,Paul A., Electronic apparatus having a core conductive structure within an insulating layer.
  37. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
  38. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
  39. Luo, Yuefeng, Fabrication of topical stopper on MLS gasket by active matrix electrochemical deposition.
  40. Luo, Yuefeng, Fabrication of topical stopper on head gasket by active matrix electrochemical deposition.
  41. Farrar,Paul A., Hplasma treatment.
  42. Kovarsky,Nicolay Y.; Lubomirsky,Dmitry; Rabinovich,Yevgeniy (Eugene), Insoluble anode with an auxiliary electrode.
  43. Farrar, Paul A., Integrated circuit and seed layers.
  44. Farrar,Paul A., Integrated circuit and seed layers.
  45. Lin, Craig, Luminance enhancement structure for reflective display devices.
  46. Lin, Craig, Luminance enhancement structure for reflective display devices.
  47. Lin, Craig; Sprague, Robert A., Luminance enhancement structure for reflective display devices.
  48. Lin, Craig, Luminance enhancement structure with Moiré reducing design.
  49. Lin, Craig, Luminance enhancement structure with varying pitches.
  50. Campbell, William Jarrett; Sonderman, Thomas; Christian, Craig W., Method and apparatus for run-to-run control of deposition process.
  51. Hey, Peter; Kwak, Byung-Sung Leo, Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio.
  52. Dordi, Yezdi N.; Stevens, Joseph J.; Sugarman, Michael N., Method and associated apparatus for tilting a substrate upon entry for metal deposition.
  53. Bresler,Joel; Raffel,Jack, Method and system for locating position in printed texts and delivering multimedia information.
  54. Baskaran,Rajesh; Kim,Bioh; Chen,Linlin; Graham,Lyndon W, Method for applying metal features onto barrier layers using electrochemical deposition.
  55. Chen, Linlin; Wilson, Gregory J.; McHugh, Paul R.; Weaver, Robert A.; Ritzdorf, Thomas L., Method for electrochemically depositing metal on a semiconductor workpiece.
  56. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
  57. Hongo, Akihisa; Nagai, Mizuki; Ohno, Kanji; Kimizuka, Ryoichi; Maruyama, Megumi, Method for plating a first layer on a substrate and a second layer on the first layer.
  58. Zheng, Bo; Bajaj, Rajeev; Wang, Zhonghui Alex, Method for regulating the electrical power applied to a substrate during an immersion process.
  59. Zheng, Bo; Wang, Hougong; Dixit, Girish; Chen, Fusen, Method of application of electrical biasing to enhance metal deposition.
  60. Cheung, Robin; Chen, Liang-Yuh, Method of forming copper interconnects.
  61. Chen,LinLin; Graham,Lyndon W.; Ritzdorf,Thomas L.; Fulton,Dakin; Batz, Jr.,Robert W., Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density.
  62. Ahn, Kie Y.; Forbes, Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
  63. Ahn,Kie Y.; Forbes,Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
  64. Ritzdorf,Thomas L.; Eudy,Steve L.; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Aegerter,Brian; Dundas,Curt; Peace,Steven L., Methods and apparatus for processing microelectronic workpieces using metrology.
  65. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
  66. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
  67. Deevi, Sarojini; Pithawalla, Yezdi B., Preparation of intermetallics by metallo-organic decomposition.
  68. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
  69. Scheible, Kathleen; Flanigan, Michael Allen; Yoshidome, Goichi; Allen, Adolph Miller; Pavloff, Cristopher M., Process kit and target for substrate processing chamber.
  70. Young, Donny; Ritchie, Alan Alexander; Hong, Ilyoung (Richard); Scheible, Kathleen A., Process kit components for titanium sputtering chamber.
  71. Hanson, Kyle M.; Eudy, Steve L.; Ritzdorf, Thomas L.; Wilson, Gregory J.; Woodruff, Daniel J.; Harris, Randy; Weber, Curtis A.; McGlenn, Tim; Anderson, Timothy A.; Bexten, Daniel P., Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces.
  72. Weidman,Timothy W., Ruthenium containing layer deposition method.
  73. Merricks, David; Morrissey, Denis; Bayes, Martin W.; Lefebvre, Mark; Shelnut, James G.; Storjohann, Donald E., Seed layer repair bath.
  74. Morrissey, Denis; Merricks, David; Barstad, Leon R.; Step, Eugene N.; Calvert, Jeffrey M.; Schetty, III, Robert A.; Shelnut, James G.; Lefebvre, Mark; Bayes, Martin W.; Storjohann, Donald E., Seed layer repair method.
  75. Ahn,Kie Y.; Forbes,Leonard, Selective electroless-plated copper metallization.
  76. Allen, Adolph Miller; Yoon, Ki Hwan; Guo, Ted; Yang, Hong S.; Yu, Sang-Ho, Sputtering target having increased life and sputtering uniformity.
  77. Farrar, Paul A., Structures and methods to enhance copper metallization.
  78. Farrar, Paul A., Structures and methods to enhance copper metallization.
  79. Farrar,Paul A., Structures and methods to enhance copper metallization.
  80. Farrar,Paul A., Structures and methods to enhance copper metallization.
  81. Chen, Linlin; Graham, Lyndon W.; Ritzdorf, Thomas L.; Fulton, Dakin; Batz, Jr., Robert W., Submicron metallization using electrochemical deposition.
  82. Hongo, Akihisa; Nagai, Mizuki; Ohno, Kanji; Kimizuka, Ryoichi; Maruyama, Megumi, Substrate plating method and apparatus.
  83. Wang,You; Chang,Anzhong; Dukovic,John O., Substrate support element for an electrochemical plating cell.
  84. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  85. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  86. Ritchie, Alan Alexander; Young, Donny; Hong, Ilyoung (Richard); Scheible, Kathleen A.; Kelkar, Umesh, Target for sputtering chamber.
  87. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  88. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  89. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  90. Woo, Christy Mei-Chu; Wang, Connie Pin-Chin; Avanzino, Steve C., Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability.
  91. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., Workpiece processor having processing chamber with improved processing fluid flow.
  92. Wilson,Gregory J.; McHugh,Paul R.; Hanson,Kyle M., Workpiece processor having processing chamber with improved processing fluid flow.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로