초록 ▼

A multilevel interconnect structure with a low-k dielectric constant is fabricated in an integrated circuit structure by the steps of depositing a layer of photoresist on a substrate assembly, etching the photoresist to form openings, forming a metal layer on the photoresist layer to fill the openin

A multilevel interconnect structure with a low-k dielectric constant is fabricated in an integrated circuit structure by the steps of depositing a layer of photoresist on a substrate assembly, etching the photoresist to form openings, forming a metal layer on the photoresist layer to fill the openings and then removing the photoresist layer by, for example, ashing. The metal layer is supported by the metal which filled the openings formed in the photoresist.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of fabricating a semiconductor interconnect structure comprising the steps of:depositing a layer of photoresist on a substrate assembly; etching the photoresist layer to form a plurality of openings;depositing a metal layer on the photoresist layer to fill the

[ What is claimed is:] [1.]1. A method of fabricating a semiconductor interconnect structure comprising the steps of:depositing a layer of photoresist on a substrate assembly; etching the photoresist layer to form a plurality of openings;depositing a metal layer on the photoresist layer to fill the openings formed in the photoresist layer;removing the photoresist layer such that the metal layer is supported by the metal which fills the openings formed in the photoresist; anddepositing a low-k dielectric film on the interconnect structure.