초록 ▼

A method for planarizing a semiconductor wafer. An insulation layer is formed over the wafer. A spin-on-glass layer is coated over the insulation layer. Subsequently, the spin-on-glass layer is baked to smooth out its upper surface. A chemical-mechanical polishing process is carried out to planarize

A method for planarizing a semiconductor wafer. An insulation layer is formed over the wafer. A spin-on-glass layer is coated over the insulation layer. Subsequently, the spin-on-glass layer is baked to smooth out its upper surface. A chemical-mechanical polishing process is carried out to planarize the insulation layer. The method eliminates recess cavities in the more loosely packed device region of the insulation layer after a planarization process.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for planarization, comprising the steps of:providing a semiconductor wafer;forming an insulation layer over the semiconductor wafer;coating a spin-on-glass layer over the insulation layer;baking the spin-on-glass layer at a temperature between about 100 and abo

[ What is claimed is:] [1.]1. A method for planarization, comprising the steps of:providing a semiconductor wafer;forming an insulation layer over the semiconductor wafer;coating a spin-on-glass layer over the insulation layer;baking the spin-on-glass layer at a temperature between about 100 and about 170 degrees Celsius;planarizing the wafer surface by performing a chemical-mechanical polishing process, wherein no curing process is performed on the spin-on-glass layer during any part of the method for planarization.