초록 ▼

The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of t

The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for use in determining the energy of a low-energy particle, the method comprising:exposing the back surface of a backside-thinned, delta-doped CCD to the low-energy particle,measuring an amount of electric charge collected in the CCD as a result of the penetrat

[ What is claimed is:] [1.]1. A method for use in determining the energy of a low-energy particle, the method comprising:exposing the back surface of a backside-thinned, delta-doped CCD to the low-energy particle,measuring an amount of electric charge collected in the CCD as a result of the penetration of the low-energy particle through the back surface of the CCD, andapplying a conversion factor to the measured charge to calculate the energy of the low-energy particle,wherein the low-energy particle is a proton having energy between approximately 10.0 KeV and 1.2 keV.