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Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-049/00
출원번호 US-0184767 (1998-11-02)
발명자 / 주소
  • Wiswesser Andreas Norbert,DEX
  • Pan Judon Tony
  • Swedek Boguslaw
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Fish & Richardson
인용정보 피인용 횟수 : 103  인용 특허 : 16

초록

An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the p

대표청구항

[ What is claimed is:] [1.]1. A method for determining an endpoint associated with chemical mechanical polishing a metal layer on a substrate, the endpoint having a predetermined intensity pattern, the method comprising:bringing a surface of the substrate into contact with a polishing pad that has a

이 특허에 인용된 특허 (16)

  1. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  2. O\Boyle Martin Patrick (Peekskill NY) Panner John Charles (Underhill VT) Sandwick Thomas Edwin (Hopewell Junction NY) van Kessel Theodore Gerard (Millbrook NY) Wickramasinghe Hemantha Kumar (Chappaqu, Assembly and method for making in process thin film thickness measurments.
  3. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  4. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
  5. Tang Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical po.
  6. Sandhu Gurtej Singh (Boise ID), Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers.
  7. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  8. Holzapfel Paul ; Schlueter James ; Karlsrud Chris ; Lin Warren, Methods and apparatus for detecting removal of thin film layers during planarization.
  9. Koos Daniel A. (Boise ID) Meikle Scott (Boise ID), Optical end point detection methods in semiconductor planarizing polishing processes.
  10. Yagi Takeshi,JPX, Optical polishing apparatus and methods.
  11. Takahashi Tsutomu (Yokohama JPX) Tohyama Keiichi (Kawasaki JPX) Takahashi Tamami (Yamato JPX), Polishing apparatus having endpoint detection device.
  12. Hiyama Hirokuni,JPX ; Wada Yutaka,JPX, Polishing apparatus including thickness or flatness detector.
  13. Moriyama Shigeo (Tama JPX) Kawamura Yoshio (Kokubunji JPX) Homma Yoshio (Hinode-machi JPX) Kusukawa Kikuo (Fujino-machi JPX) Furusawa Takeshi (Hachioji JPX), Polishing method.
  14. Roberts John V. H. (Newark DE), Polishing pads.
  15. Corliss Daniel A. (Leominster MA), Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection.
  16. Lund Douglas E., System and method of automatically polishing semiconductor wafers.

이 특허를 인용한 특허 (103)

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