초록 ▼

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

대표청구항 ▼

[ What is claimed is:] [1.]1. An active matrix display device having a plurality of thin film transistors formed on an insulating surface, each of said thin film transistors having a semiconductive active region comprising a crystalline silicon film formed on said insulating surface, wherein said cr

[ What is claimed is:] [1.]1. An active matrix display device having a plurality of thin film transistors formed on an insulating surface, each of said thin film transistors having a semiconductive active region comprising a crystalline silicon film formed on said insulating surface, wherein said crystalline silicon film contains a catalyst element which promotes a crystallization of an amorphous silicon film at a concentration not higher than 1.times.10.sup.19 atoms/cm.sup.3,wherein a surface of said silicon film has at least one of planes expressed by {hk1} (h+k=1) and wherein the planes expressed by {hk1} are {110}, {123}, {134}, {235}, {145}, {156}, {257}, and {167}.