초록 ▼

The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that ca

The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

대표청구항 ▼

[ What is claimed is as follows:] [1.]1. An apparatus for processing a microelectronic device precursor having first and second opposed major surfaces, said apparatus comprising:(a) a chamber housing defining a processing chamber in which the microelectronic device precursor is positioned during a t

[ What is claimed is as follows:] [1.]1. An apparatus for processing a microelectronic device precursor having first and second opposed major surfaces, said apparatus comprising:(a) a chamber housing defining a processing chamber in which the microelectronic device precursor is positioned during a treatment;(b) a first chamber window positioned in a manner such a first fluence of energy can be irradiated through the first chamber window and onto the first major surface; and(c) a second chamber window positioned in a manner such a second fluence of energy can be irradiated through the second chamber window and onto the second major surface;(d) a gas inlet through which a flow comprising a processing gas enters the chamber;(e) a gas outlet through which the flow exits the chamber, wherein the gas inlet and gas outlet are operatively positioned such that the flow from the gas inlet to the gas outlet is aligned with and moves laterally across the major surfaces of the microelectronic device precursor in a direction from one peripheral side of the microelectronic device precursor to another peripheral side of the microelectronic device precursor.