초록 ▼

Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and f

Methods of forming copper interconnects free from via-to-via leakage currents and having low resistances are disclosed. In a first aspect, a barrier layer is deposited on the first metal layer prior to copper oxide sputter-etching to prevent copper atoms from reaching the interlayer dielectric and forming via-to-via leakage current paths therein. In a second aspect, a capping dielectric barrier layer is deposited over the first metal layer prior to sputter etching. During sputter-etching, the capping dielectric barrier layer redistributes on the sidewalls of the interlayer dielectric, preventing sputter-etched copper atoms from reaching the interlayer dielectric and forming via-to-via leakage paths therein. In a third aspect, both a capping dielectric barrier layer and a barrier layer are deposited over the first metal layer prior to sputter-etching to prevent copper atoms produced during sputter-etching from reaching the interlayer dielectric and forming via-to-via leakage paths therein.

대표청구항 ▼

[ The invention claimed is:] [1.]1. A method of forming a contact between a first metal layer and a second metal layer comprising:providing a first metal layer;providing a first dielectric layer disposed on the first metal layer, the first dielectric layer being one in which atoms of the first metal

[ The invention claimed is:] [1.]1. A method of forming a contact between a first metal layer and a second metal layer comprising:providing a first metal layer;providing a first dielectric layer disposed on the first metal layer, the first dielectric layer being one in which atoms of the first metal layer are highly mobile and having a via formed therein to expose the first metal layer;depositing a barrier layer on the first dielectric layer;exposing at least a portion of the first metal layer; anddepositing a second metal layer on the exposed first metal layer, thereby forming a contact between the first metal layer and the second metal layer, wherein depositing the barrier layer and exposing at least a portion of the first metal layer occur simultaneously.