초록 ▼

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adja

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH.sub.3 SiH.sub.3, or dimethylsilane, (CH.sub.3).sub.2 SiH.sub.2, and nitrous oxide, N.sub.2 O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting a compound with an oxidizing gas while applying RF power to deposit the low dielectric constant film on the semiconductor substrate, wherein the compound comprises o

[ What is claimed is:] [1.]1. A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting a compound with an oxidizing gas while applying RF power to deposit the low dielectric constant film on the semiconductor substrate, wherein the compound comprises one or more silicon atoms, at least one alkyl group bonded to each silicon atom, and at least one hydrogen atom bonded to each silicon atom, and wherein the low dielectric constant film has a dielectric constant of about 3 or less, is located between conductive materials on said semiconductor substrate, and retains sufficient silicon-carbon bonds to have a carbon content from about 1% to about 50% by atomic weight.