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Method for characterizing defects on semiconductor wafers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01N-021/88
출원번호 US-0305871 (1999-05-05)
발명자 / 주소
  • Worster Bruce W.
  • Lee Ken K.
출원인 / 주소
  • Ultrapointe Corporation
대리인 / 주소
    Skjerven Morrill MacPherson LLPMacPherson
인용정보 피인용 횟수 : 73  인용 특허 : 107

초록

A method is described for characterizing defects on a test surface of a semiconductor wafer using a confocal-microscope-based automatic defect characterization (ADC) system. The surface to be tested and a reference surface are scanned using a confocal microscope to obtain three-dimensional images of

대표청구항

[ What is claimed is:] [1.]1. A method of locating defects on a test surface, wherein the test surface is contained within a test volume represented by a Cartesian coordinate system having x, y, and z axes describing a set of unique x-y-z coordinates, the method comprising the steps of:scanning the

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