초록 ▼

A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preve

A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms, in which more than one type of metal atom is provided in barrier film. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing different types of precursors, such as metal halides (e.g., BaF.sub.2 and SrF.sub.2), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.

대표청구항 ▼

[ What is claimed is:] [2.]2. A semiconductor device comprisinga substrate;a barrier film, on said substrate, having a first monolayer consisting of a first type of metal atoms selected from the group consisting of barium atoms, strontium atoms, cesium atoms, and rubidium atoms, and a second monolay

[ What is claimed is:] [2.]2. A semiconductor device comprisinga substrate;a barrier film, on said substrate, having a first monolayer consisting of a first type of metal atoms selected from the group consisting of barium atoms, strontium atoms, cesium atoms, and rubidium atoms, and a second monolayer consisting of a second type of atoms selected from the group consisting of barium atoms, strontium atoms, cesium atoms, and rubidium atoms; wherein said first and second types of metal atoms are different from each other; andmaterial on said barrier film.