초록 ▼

Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed

Semiconductor device and method for manufacturing the same prevent the spread of a tungsten film out of an opening portion of a contact hole when the tungsten is grown in the contact hole and avoid inferior wiring shape and inter-wiring shirt-circuit. After a titanium/titanium nitride film is formed along an inner surface of the contact hole, a photo-resist film is applied. Then, the photo-resist film is etched away until a distance from an upper end of the contact hole to the surface of photo-resist film is not smaller than one-half of a width of the contact hole when the titanium/titanium nitride film is formed. After the titanium/titanium nitride film is etched by using the photo-resist as a mask, the photo-resist film is removed and a tungsten layer is selectively grown by using the titanium/titanium nitride film as a seed.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for manufacturing a semiconductor device having an insulation film, comprising the steps of:forming a contact hole in said insulation film;forming a first conductive film on a surface of said semiconductor device including an inner surface of said contact hole;

[ What is claimed is:] [1.]1. A method for manufacturing a semiconductor device having an insulation film, comprising the steps of:forming a contact hole in said insulation film;forming a first conductive film on a surface of said semiconductor device including an inner surface of said contact hole;applying a film for filling said contact hole;etching said applied film until a distance from an opening portion of said contact hole to a surface of said applied film becomes not smaller than one-half of a width of said contact hole less twice of a thickness of said first conductive film while said applied film remains at a bottom of said contact hole;etching said first conductive film by using said applied film as a mask;removing said remaining applied film; andselectively growing a second conductive film to fill said contact hole by using said first conductive film remaining on the inner surface of said contact hole as a seed for selective growth.