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Fabrication process for a semiconductor substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0807604 (1997-02-27)
우선권정보 JP0041709 (1996-02-28)
발명자 / 주소
  • Sakaguchi Kiyofumi,JPX
  • Yonehara Takao,JPX
출원인 / 주소
  • Canon Kabushiki Kaisha, JPX
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 97  인용 특허 : 10

초록 ▼

Carried out to achieve the above are a step of bonding a principal surface of a first substrate to a principal surface of a second substrate, the first substrate being Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer, a step of exposing the porous

대표청구항 ▼

[ What is claimed is:] [1.]1. A fabrication process for a semiconductor film comprising:a step of preparing a first substrate having at least one layer of non-porous thin film on a porous Si layer;a step of forming a bonding substrate by bonding said first substrate to a second substrate such that s

이 특허에 인용된 특허 (10)

  1. Tayanaka Hiroshi,JPX, Method for making thin film semiconductor.
    상세보기
  2. Matsushita Takeshi,JPX ; Tayanaka Hiroshi,JPX, Method for separating a device-forming layer from a base body.
    상세보기
  3. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heat treating.
    상세보기
  4. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heating to flatten an unpolished surface.
    상세보기
  5. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for production of semiconductor substrate.
    상세보기
  6. Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Process for the production of a structure having a thin semiconductor film on a substrate.
    상세보기
  7. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
    상세보기
  8. Yonehara Takao (Atsugi JPX) Yamagata Kenji (Kawasaki JPX), Process of making semiconductor-on-insulator substrate.
    상세보기
  9. Sakaguchi Kiyofumi (Atsugi JPX) Yonehara Takao (Atsugi JPX), Semiconductor device substrate and process for preparing the same.
    상세보기
  10. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
    상세보기

이 특허를 인용한 특허 (97)

  1. Giannuzzi, Lucille A.; Stevie, Frederick A.; Vartuli, Catherine, Calibration method for quantitative elemental analysis.
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  3. Henley, Francois J.; Cheung, Nathan W., Controlled cleaving process.
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