초록 ▼

A structure of combined passive elements and logic circuits on a SOI (Silicon On Insulator) wafer. By combining passive elements (including a resistor, an inductor and a capacitor) with a logic device on a SOI wafer with dual damascene technology, an extremely thick inductor that effectively reduces

A structure of combined passive elements and logic circuits on a SOI (Silicon On Insulator) wafer. By combining passive elements (including a resistor, an inductor and a capacitor) with a logic device on a SOI wafer with dual damascene technology, an extremely thick inductor that effectively reduces the resistance of the inductor can be formed while also reducing the layout area. The invention is compatible with conventional VLSI technology without increasing number of masks or process steps. Furthermore, because the resistor of the invention is composed of single crystal Si, the resistor has high stability and low noise. Therefore, the structure according to the invention is suitable for RF device design and is also suitable for a System On Chip design.

대표청구항 ▼

[ What is claimed is:] [1.]1. A structure of combined passive elements and logic circuits on a Silicon On Insulator (SOI) wafer, comprising:a silicon substrate;a first oxide layer formed on the silicon substrate;a SOI substrate formed on the first oxide layer;a first shallow trench isolation layer f

[ What is claimed is:] [1.]1. A structure of combined passive elements and logic circuits on a Silicon On Insulator (SOI) wafer, comprising:a silicon substrate;a first oxide layer formed on the silicon substrate;a SOI substrate formed on the first oxide layer;a first shallow trench isolation layer formed on the first oxide layer and adjacent to the SOI substrate;a first single crystal Si resistor layer formed on the first oxide layer and adjacent to the first shallow trench isolation layer;a second shallow trench isolation layer formed on the first oxide layer and adjacent to the first single crystal Si resistor layer;a second single crystal Si resistor layer formed on the first oxide layer and adjacent to the second shallow trench isolation layer;a transistor formed on the SOI substrate;a capacitor formed on the first single crystal Si resistor layer, wherein the capacitor comprises a lower electrode, a second oxide layer and an upper electrode, which are stacked sequentially, wherein the lower electrode is electrically connected to the first single crystal Si resistor layer;a dielectric layer over the silicon substrate, wherein a first via opening, a second via opening, a third via opening and a fourth via opening are formed in the dielectric layer;a first multilevel interconnects layer filling in the first via opening and electrically connected to the second single crystal Si resistor layer;a second multilevel interconnects layer filling the second via opening and electrically connected to the upper electrode of the capacitor;a third multilevel interconnects layer filling the third via opening and electrically connected to the lower electrode of the capacitor; anda fourth multilevel interconnects layer filling the fourth via opening and electrically connected to the third multilevel interconnects layer and the gate of the transistor.