초록 ▼

A chemical delivery system which utilizes multiple techniques to achieve a suitable chemical purge of the chemical delivery system is provided. A purge sequence serves to purge the manifold and canister connection lines of the chemical delivery system prior to removal of an empty chemical supply can

A chemical delivery system which utilizes multiple techniques to achieve a suitable chemical purge of the chemical delivery system is provided. A purge sequence serves to purge the manifold and canister connection lines of the chemical delivery system prior to removal of an empty chemical supply canister or after a new canister is installed. More particularly, a purge technique which may utilizes a variety of combinations of a medium level vacuum source, a hard vacuum source, and/or a liquid flush system is disclosed. By utilizing a plurality of purge techniques, chemicals such as TaEth, TDEAT, BST, etc. which pose purging difficulties may be efficiently purged from the chemical delivery system. The chemical delivery system may also be provided with an efficient and conveniently located heater system for heating the chemical delivery system cabinet.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of forming a layer upon a semiconductor substrate, comprising:providing the semiconductor substrate, the substrate having one or more layers;providing a deposition process tool;coupling a chemical delivery system to the deposition process tool to provide a low

[ What is claimed is:] [1.]1. A method of forming a layer upon a semiconductor substrate, comprising:providing the semiconductor substrate, the substrate having one or more layers;providing a deposition process tool;coupling a chemical delivery system to the deposition process tool to provide a low vapor pressure liquid chemical to the deposition process tool;periodically purging at least a portion of the chemical delivery system of the low vapor pressure liquid chemical, the purging including the use of at least three different purging techniques each having a separate source that is separate from a source containing the low vapor pressure liquid chemical; anddepositing the layer upon the semiconductor substrate by utilizing the low vapor pressure liquid chemical within the deposition process tool.