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Bulk single crystals of aluminum nitride 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C01B-021/072
  • C30B-029/38
출원번호 US-0361945 (1999-07-27)
발명자 / 주소
  • Hunter Charles Eric
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Faust
인용정보 피인용 횟수 : 48  인용 특허 : 23

초록

Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

대표청구항 ▼

[ What is claimed is:] [1.]1. A bulk single crystal of AlN grown by deposition of vapor species containing Al and N on a seed crystal growth surface, said bulk single crystal having a sufficient size and sufficient purity to permit its use in electronic applications, with the crystal having a diamet

이 특허에 인용된 특허 (23)

  1. Dugger Cortland O. (Newton MA), Aluminum nitride single crystal growth from a molten mixture with calcium nitride.
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  2. Jasinski Thomas J. (Medford MA) Witt August F. (Winchester MA), Apparatus for growing crystals.
    상세보기
  3. Rutz, Richard F., Epitaxial crystal fabrication of SiC:AlN.
    상세보기
  4. Dryburgh Peter M. (Dalkeith GB6) Halstead Raymond R. (Edinburgh GB6), Epitaxial crystalline aluminium nitride.
    상세보기
  5. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
    상세보기
  6. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
    상세보기
  7. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
    상세보기
  8. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride from a melt.
    상세보기
  9. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitrid.
    상세보기
  10. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Joyo JPX) Fujii Yoshihisa (Nara JPX), Light emitting diode.
    상세보기
  11. Vodakov Jury A. (prospekt Engelsa ; 69/1 ; kv. 35 Leningrad SU) Mokhov Evgeny N. (prospekt Energetikov ; 54 ; korpus 2 ; kv. 59 Leningrad SU), Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition techniqu.
    상세보기
  12. Chyi Jen-Inn (3F ; No. 38 ; Lane 8 ; Gao-Shuang Road Ping-Chen ; Taoyuan Hsien TWX), Method for the growth of nitride based semiconductors and its apparatus.
    상세보기
  13. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Tenri JPX), Method of fabricating single-crystal substrates of silicon carbide.
    상세보기
  14. Nii Keita (Kyoto JPX), Method of manufacturing a hetero-junction bi-polar transistor.
    상세보기
  15. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal.
    상세보기
  16. Kim Sung C. (Boise ID) Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering.
    상세보기
  17. Rutz Richard F. (Cold Spring NY), Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide.
    상세보기
  18. Nadkarni Sadashiv K. (Jonquiere CAX), Process for producing unagglomerated single crystals of aluminum nitride.
    상세보기
  19. Parent Luc (Quebec CAX), Process for producing unagglomerated single crystals of aluminum nitride.
    상세보기
  20. Streetman, Ben G.; Mattord, Terry J.; Kesan, Vijay P.; Treetman, Ben G.; Mattord, Terry, Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction.
    상세보기
  21. Harris Christopher,SEX, Semiconductor device having a passivation layer.
    상세보기
  22. Rutz Richard F. (Cold Spring NY), Structure containing epitaxial crystals on a substrate.
    상세보기
  23. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
    상세보기

이 특허를 인용한 특허 (48)

  1. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them.
    상세보기
  2. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them.
    상세보기
  3. Jeong, Min Jae; Kim, Do Geun; Jeong, Seok Heon, Apparatus for depositing an organic layer and method for controlling a heating unit thereof.
    상세보기
  4. Katou, Tomohisa; Nagai, Ichirou; Miura, Tomonori; Kamata, Hiroyuki, Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal.
    상세보기
  5. Slack, Glen A.; Schujman, Sandra B., Deep-eutectic melt growth of nitride crystals.
    상세보기
  6. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  7. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  8. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  9. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  10. Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert, Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  11. Schlesser, Raoul; Dalmau, Rafael F.; Noveski, Vladimir; Sitar, Zlatko, Dense, shaped articles constructed of a refractory material and methods of preparing such articles.
    상세보기
  12. Schlesser, Raoul; Dalmau, Rafael F.; Noveski, Vladimir; Sitar, Zlatko, Dense, shaped articles constructed of a refractory material and methods of preparing such articles.
    상세보기
  13. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  14. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  15. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  16. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
    상세보기
  17. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
    상세보기
  18. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
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  19. Miyanaga, Michimasa; Mizuhara, Naho; Fujiwara, Shinsuke; Nakahata, Seiji; Nakahata, Hideaki, Group III nitride single crystal and method of its growth.
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  20. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn R.; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
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  21. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn Robert; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
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  22. Koukitu, Akinori; Kumagai, Yoshinao; Nagashima, Toru; Kinoshita, Toru; Kubota, Yuki; Dalmau, Rafael F.; Xie, Jinqiao; Moody, Baxter F.; Schlesser, Raoul; Sitar, Zlatko, Highly transparent aluminum nitride single crystalline layers and devices made therefrom.
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  23. Miyanaga, Michimasa; Mizuhara, Naho; Fujiwara, Shinsuke; Nakahata, Hideaki; Kawase, Tomohiro, III-nitride single-crystal growth method.
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  24. Bondokov, Robert T.; Morgan, Kenneth; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
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  25. Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
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  26. Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
    상세보기
  27. Wang, Shaoping, Method and apparatus for aluminum nitride monocrystal boule growth.
    상세보기
  28. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
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  29. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
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  30. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
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  31. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos; Bondokov, Robert T.; Morgan, Kenneth E.; Smart, Joseph A., Method and apparatus for producing large, single-crystals of aluminum nitride.
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  32. Schowalter, Leo; Slack, Glen A.; Rojo, Juan Carlos; Bondokov, Robert T.; Morgan, Kenneth E.; Smart, Joseph A., Method and apparatus for producing large, single-crystals of aluminum nitride.
    상세보기
  33. Miyanaga, Michimasa; Mizuhara, Naho; Nakahata, Hideaki, Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrate.
    상세보기
  34. Miyanaga, Michimasa; Mizuhara, Naho; Tanizaki, Keisuke; Satoh, Issei; Takeuchi, Hisao; Nakahata, Hideaki, Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal.
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  35. Sasaki,Takatomo; Mori,Yusuke; Kawamura,Fumio; Yoshimura,Masashi; Kai,Yasunori; Imade,Mamoru; Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao, Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method.
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  36. Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Methods for controllable doping of aluminum nitride bulk crystals.
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  37. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
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  38. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
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  39. Xie, Jinqiao; Moody, Baxter; Mita, Seiji, Optoelectronic devices incorporating single crystalline aluminum nitride substrate.
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  40. Xie, Jinqiao; Moody, Baxter; Mita, Seiji, Optoelectronic devices incorporating single crystalline aluminum nitride substrate.
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  41. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
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  42. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
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  43. Schowalter,Leo J.; Slack,Glen A., Powder metallurgy crucible for aluminum nitride crystal growth.
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  44. Moody, Baxter; Mita, Seiji; Xie, Jinqiao, Power semiconductor devices incorporating single crystalline aluminum nitride substrate.
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  45. Barz, Ralph-Uwe; Straubinger, Thomas, Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate.
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  46. Grandusky, James R.; Schowalter, Leo J.; Jamil, Muhammad; Mendrick, Mark C.; Gibb, Shawn R., Pseudomorphic electronic and optoelectronic devices having planar contacts.
    상세보기
  47. Schlesser, Raoul; Noveski, Vladimir; Sitar, Zlatko, Seeded growth process for preparing aluminum nitride single crystals.
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  48. Schowalter, Leo J.; Smart, Joseph A.; Grandusky, James R.; Liu, Shiwen, Thick pseudomorphic nitride epitaxial layers.
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