초록 ▼

In a plasma processing apparatus wherein plasma is generated in a vacuum chamber 1 thereby to perform etching to a substrate 8 placed on a substrate electrode 7, a voltage monitoring conductor 11 is provided in the vicinity of the substrate electrode 7, and high-frequency power is supplied to both o

In a plasma processing apparatus wherein plasma is generated in a vacuum chamber 1 thereby to perform etching to a substrate 8 placed on a substrate electrode 7, a voltage monitoring conductor 11 is provided in the vicinity of the substrate electrode 7, and high-frequency power is supplied to both of the substrate electrode 7 and the voltage monitoring conductor 11. Completion of etching operation is detected by monitoring a self-biasing potential generated in this voltage-monitoring conductor 11.

대표청구항 ▼

[ What is claimed is:] [1.]1. An etching method, comprising:performing an etching operation by placing a substrate on a substrate electrode in a vacuum chamber in which plasma is generated while control is exercised such that an interior of the vacuum chamber is adjusted at a prescribed pressure by

[ What is claimed is:] [1.]1. An etching method, comprising:performing an etching operation by placing a substrate on a substrate electrode in a vacuum chamber in which plasma is generated while control is exercised such that an interior of the vacuum chamber is adjusted at a prescribed pressure by supplying a gas into the vacuum chamber and evacuating the vacuum chamber;supplying high-frequency power to a voltage monitoring conductor which is independent of the substrate electrode through a matching circuit, said voltage monitoring conductor being positionally located one of on and in a vicinity of the substrate electrode;monitoring a self-biasing potential generated in the voltage monitoring conductor during the etching operation; andproviding the substrate electrode and the voltage monitoring conductor coupled through a capacitor.