$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Serial device compaction for improving integrated circuit layouts 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-025/00
출원번호 US-0448623 (1999-11-23)
발명자 / 주소
  • Schober Robert C.
출원인 / 주소
  • ManoPower Technologies, Inc.
대리인 / 주소
    Blakely, Sokoloff, Taylor & Zafman LLPBecker
인용정보 피인용 횟수 : 117  인용 특허 : 32

초록

Techniques for providing improved memory flip-flops and other logic circuits are described. A flip-flop uses only one p-channel transistor to drive the output node strongly to achieve fast results. To reduce diffusion area, parallel logic is substantially eliminated and only series branches are used

대표청구항

[ What is claimed is:] [1.]1. A logic device formed on a semiconductor substrate for producing an output signal based on a plurality of input signals, the logic device comprising a first plurality of transistors of a first channel type, each of the first plurality of transistors coupled to a first s

이 특허에 인용된 특허 (32)

  1. Hwang Yi-Ren ; Wendell Dennis L. ; Partovi Hamid, Amplifier-based flip-flop elements.
  2. Gersbach John E. (Burlington VT) Chung Paul W. (San Jose CA), Assertive latching flip-flop.
  3. Vaughn, Herchel A., CMOS Flip-flop.
  4. Brucculeri, Louis S.; Giddings, James N., Circuit for eliminating metastable events associated with a data signal asynchronous to a clock signal.
  5. Colvin ; Sr. Bryan J. (San Jose CA), Circuit for filtering asynchronous metastability of cross-coupled logic gates.
  6. Hirasawa ; Masataka, Complementary MOS logic circuit.
  7. Hara Hiroyuki (Tokyo JPX) Ueno Masaji (Kanagawa JPX), Complementary signal output circuit with reduced skew.
  8. Le Roux Grard (La Tranche FRX) Vialettes Francoise (St. Egreve FRX), Conversion circuit of a differential input in CMOS logic levels.
  9. Ferris David A. (West Buxton ME), Data latch with enable signal gating.
  10. Paschal ; James P. ; Nickel ; Donald F. ; Drozd ; Charles J., De-glitchablenon-metastable flip-flop circuit.
  11. Baukus James P. ; Chow Lap Wai ; Clark ; Jr. William M., Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering.
  12. Suzuki Yasoji (Kawasaki JPX) Takada Minoru (Ohmori Nishi JPX), Flip-flop circuit.
  13. Yamashita Hiroki (Hachioji JPX) Itoh Hiroyuki (Akigawa JPX) Tanaka Hirotoshi (Kokubunji JPX) Kawata Atsumi (Hachioji JPX) Nagai Kenji (Iruma JPX) Yoshihara Kazuhiro (Ome JPX) Imaizumi Ichiro (Tokyo J, Flip-flop circuit.
  14. Asazawa Hiroshi (Tokyo JPX), Flip-flop circuit having CMOS hysteresis inverter.
  15. Mitra Sundari S. (Milpitas CA) Greenhill David (Portola Valley CA) Ferolito Philip A. (Sunnyvale CA), Flip-flop with full scan capability.
  16. Sato Yasushi (Kawasaki JPX), High-integration J-K flip-flop circuit.
  17. Athas William C. (Redondo Beach CA) Svensson Lars G. (Santa Monica CA), Highly efficient, complementary, resonant pulse generation.
  18. Piguet Christian (Neuchatel CHX), Logic D flip-flop structure.
  19. Aoki Kiyoshi (Yokohama JPX), Logic circuit.
  20. Gaibotti Maurizio,ITX ; Adduci Francesco,ITX, Low-consumption and high-density D flip-flop circuit implementation particularly for standard cell libraries.
  21. Kubota Katuhisa (Kawasaki JPX), Master slave latch circuit with race prevention.
  22. Campbell David L. (Sunnyvale CA), Master-slave multivibrator with improved metastable response characteristic.
  23. Piguet Christian,CHX ; Masgonty Jean-Marc,CHX, Memory element of the master-slave flip-flop type, constructed by CMOS technology.
  24. Mowery David L. (Highland MD), Metastable tolerant asynchronous interface.
  25. Keech Eugene E. (1830 E. Fairway Dr. ; #106 Orange CA 92666), Metastable-proof flip-flop.
  26. Best David W. (Marion IA), Multiple input master/slave flip flop apparatus.
  27. Mei Kenyon Chi-Yen (Union City CA), Multiple output logic circuits.
  28. Brice Jean-Michel (Grenoble FRX), Non-volatile flip-flop with a dynamic resetting.
  29. Farwell William D. (Thousand Oaks CA), Sample and hold flip-flop for CMOS logic.
  30. Zangara Louis (Seyssins FRX), Static bistable flip-flop circuit obtained by utilizing CMOS technology.
  31. Svensson Lars (Santa Monica CA) Athas William C. (Redondo Beach CA) Koller Jeffrey G. (Torrance CA), System and method for power-efficient charging and discharging of a capacitive load from a single source.
  32. Rinderknecht William John ; Connell Lawrence Edwin, Unbuffered latch resistant to back-writing and method of operation therefor.

이 특허를 인용한 특허 (117)

  1. Qiu, Yunchen; Davis, Harold L., Area efficient high-speed dual one-time programmable differential bit cell.
  2. Becker, Scott T., Cell circuit and layout with linear finfet structures.
  3. Becker, Scott T., Circuitry and layouts for XOR and XNOR logic.
  4. Becker, Scott T., Circuitry and layouts for XOR and XNOR logic.
  5. Becker, Scott T., Circuitry and layouts for XOR and XNOR logic.
  6. Becker, Scott T.; Smayling, Michael C.; Gandhi, Dhrumil; Mali, Jim; Lambert, Carole; Quandt, Jonathan R.; Fox, Daryl, Circuits with linear finfet structures.
  7. Takuya Yasui JP; Keiichi Kurokawa JP; Masahiko Toyonaga JP; Atsushi Takahashi JP; Yoji Kajitani JP, Clock circuit and method of designing the same.
  8. Smayling, Michael C.; Becker, Scott T., Coarse grid design methods and structures.
  9. Smayling, Michael C.; Becker, Scott T., Coarse grid design methods and structures.
  10. Smayling, Michael C.; Becker, Scott T., Coarse grid design methods and structures.
  11. Li, Mu-Jing, Correction of width violations of dummy geometries.
  12. Becker, Scott T.; Mali, Jim; Lambert, Carole, Cross-coupled transistor circuit defined having diffusion regions of common node on opposing sides of same gate electrode track with at least two non-inner positioned gate contacts.
  13. Becker, Scott T.; Mali, Jim; Lambert, Carole, Cross-coupled transistor circuit defined on three gate electrode tracks with diffusion regions of common node on opposing sides of same gate electrode track.
  14. Becker, Scott T.; Mali, Jim; Lambert, Carole, Cross-coupled transistor circuit defined on two gate electrode tracks.
  15. Becker, Scott T.; Mali, Jim; Lambert, Carole, Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track.
  16. Becker, Scott T.; Mali, Jim; Lambert, Carole, Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track and gate node connection through single interconnect layer.
  17. Becker, Scott T.; Mali, Jim; Lambert, Carole, Cross-coupled transistor circuit including offset inner gate contacts.
  18. Lim, Kyu-Nam, Cross-coupled transistor pair.
  19. Arneson, Michael; Bandy, William R.; Powell, Kevin J.; Salsman, Kenneth E.; Tirpack, Devon, Displaying image data from a scanner capsule.
  20. Arneson, Michael; Bandy, William R.; Powell, Kevin J.; Salsman, Kenneth E.; Tirpack, Devon, Displaying image data from a scanner capsule.
  21. Kornachuk, Stephen; Mali, Jim; Lambert, Carole; Becker, Scott T., Enforcement of semiconductor structure regularity for localized transistors and interconnect.
  22. Kornachuk, Stephen; Mali, Jim; Lambert, Carole; Becker, Scott T., Enforcement of semiconductor structure regularity for localized transistors and interconnect.
  23. Kornachuk, Stephen; Mali, Jim; Lambert, Carole; Becker, Scott T., Enforcement of semiconductor structure regularity for localized transistors and interconnect.
  24. Becker, Scott T.; Smayling, Michael C.; Gandhi, Dhrumil; Mali, Jim; Lambert, Carole; Quandt, Jonathan R.; Fox, Daryl, Finfet transistor circuit.
  25. Maeno, Muneaki, Flip-flop circuit.
  26. Smayling, Michael C.; Becker, Scott T., Integrated circuit cell library for multiple patterning.
  27. Smayling, Michael C.; Becker, Scott T., Integrated circuit cell library for multiple patterning.
  28. Smayling, Michael C.; Becker, Scott T., Integrated circuit cell library for multiple patterning.
  29. Becker, Scott T.; Smayling, Michael C., Integrated circuit including at least four linear-shaped conductive structures having extending portions of different length.
  30. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within at least nine gate level feature layout channels.
  31. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within at least twelve gate level feature layout channels.
  32. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels.
  33. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least one gate level feature extending into adjacent gate level feature layout channel.
  34. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level feature extensions beyond contact.
  35. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level features inner extensions beyond gate electrode.
  36. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two gate electrodes electrically connected to each other through another transistor forming gate level feature.
  37. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two gate electrodes electrically connected to each other through gate level feature.
  38. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with electrical connection of cross-coupled transistors through same interconnect layer.
  39. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts and electrical connection of transistor gates through linear interconnect conductors in single interconnect layer.
  40. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset and aligned relationships.
  41. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset and aligned relationships and electrical connection of transistor gates through linear interconnect conductors in single interconnect layer.
  42. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position and offset specifications.
  43. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position specifications.
  44. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position, alignment, and offset specifications.
  45. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate electrode placement specifications.
  46. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate level feature layout channel including single transistor.
  47. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with other transistors positioned between cross-coupled transistors.
  48. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with outer positioned gate contacts.
  49. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with serially connected transistors.
  50. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor-forming gate level feature.
  51. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor-forming gate level feature and electrical connection of transistor gates through linear interconnect conductors in single interconnect layer.
  52. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with two inside positioned gate contacts and two outside positioned gate contacts and electrical connection of cross-coupled transistors through same interconnect layer.
  53. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled transistors with two transistors of different type having gate electrodes formed by common gate level feature with shared diffusion regions on opposite sides of common gate level feature.
  54. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including cross-coupled trasistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset relationships and electrical connection of cross-coupled transistors through same interconnect layer.
  55. Becker, Scott T.; Smayling, Michael C., Integrated circuit including gate electrode conductive structures with different extension distances beyond contact.
  56. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit including gate electrode level region including cross-coupled transistors having gate contacts located over inner portion of gate electrode level region and offset gate level feature line ends.
  57. Becker, Scott T.; Smayling, Michael C., Integrated circuit including linear gate electrode structures having different extension distances beyond contact.
  58. Becker, Scott T.; Smayling, Michael C., Integrated circuit with gate electrode conductive structures having offset ends.
  59. Becker, Scott T.; Smayling, Michael C., Integrated circuit with offset line end spacings in linear gate electrode level.
  60. Becker, Scott T.; Mali, Jim; Lambert, Carole, Integrated circuit within semiconductor chip including cross-coupled transistor configuration.
  61. Herr, Lawrence N.; Hoefler, Alexander B., Level detect circuit.
  62. Seyyedy, Mirmajid; Thomann, Mark R., Method and apparatus for testing a memory device with compressed data using a single output.
  63. Seyyedy, Mirmajid; Thomann, Mark R., Method and apparatus for testing a memory device with compressed data using a single output.
  64. Gupta, Puneet; Kahng, Andrew; Reed, Dave, Method and system for reshaping a transistor gate in an integrated circuit to achieve a target objective.
  65. Arneson, Michael R.; Bandy, William Robert; Davenport, Roger Allen; Powell, Kevin J.; Ngo, Son; Okunev, Yuri; Schober, Robert, Method for acoustic information exchange involving an ingestible low power capsule.
  66. Bandy, William Robert; Davenport, Roger Allen; Okunev, Yuri, Methods and systems for acoustic data transmission.
  67. Bandy, William Robert; Davenport, Roger Allen; Okunev, Yuri, Methods and systems for acoustic data transmission.
  68. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell boundary encroachment and layouts implementing the Same.
  69. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell boundary encroachment and layouts implementing the same.
  70. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell boundary encroachment and semiconductor devices implementing the same.
  71. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell phasing and placement in dynamic array architecture and implementation of the same.
  72. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell phasing and placement in dynamic array architecture and implementation of the same.
  73. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell phasing and placement in dynamic array architecture and implementation of the same.
  74. Quandt, Jonathan R.; Becker, Scott T.; Gandhi, Dhrumil, Methods for cell phasing and placement in dynamic array architecture and implementation of the same.
  75. Reed, Brian; Smayling, Michael C.; Becker, Scott T., Methods for controlling microloading variation in semiconductor wafer layout and fabrication.
  76. Becker, Scott T.; Smayling, Michael C., Methods for designing semiconductor device with dynamic array section.
  77. Smayling, Michael C.; Becker, Scott T., Methods for linewidth modification and apparatus implementing the same.
  78. Smayling, Michael C.; Becker, Scott T., Methods for linewidth modification and apparatus implementing the same.
  79. Fox, Daryl; Becker, Scott T., Methods for multi-wire routing and apparatus implementing same.
  80. Fox, Daryl; Becker, Scott T., Methods for multi-wire routing and apparatus implementing same.
  81. Fox, Daryl; Becker, Scott T., Methods for multi-wire routing and apparatus implementing same.
  82. Smayling, Michael C.; Becker, Scott T., Methods, structures, and designs for self-aligning local interconnects used in integrated circuits.
  83. Smayling, Michael C.; Becker, Scott T., Methods, structures, and designs for self-aligning local interconnects used in integrated circuits.
  84. Smayling, Michael C.; Becker, Scott T., Methods, structures, and designs for self-aligning local interconnects used in integrated circuits.
  85. Smayling, Michael C.; Becker, Scott T., Methods, structures, and designs for self-aligning local interconnects used in integrated circuits.
  86. Becker, Scott T., Oversized contacts and vias in layout defined by linearly constrained topology.
  87. Becker, Scott T., Oversized contacts and vias in layout defined by linearly constrained topology.
  88. Becker, Scott T., Oversized contacts and vias in layout defined by linearly constrained topology.
  89. Frederick, Marlin Wayne, Post-routing power supply modification for an integrated circuit.
  90. Smayling, Michael C.; Fox, Daryl; Quandt, Jonathan R.; Becker, Scott T., Scalable meta-data objects.
  91. Smayling, Michael C.; Fox, Daryl; Quandt, Jonathan R.; Becker, Scott T., Scalable meta-data objects.
  92. Becker, Scott T.; Smayling, Michael C., Semiconductor CIP including region having rectangular-shaped gate structures and first metal structures.
  93. Becker, Scott T.; Smayling, Michael C., Semiconductor chip having region including gate electrode features formed in part from rectangular layout shapes on gate horizontal grid and first-metal structures formed in part from rectangular layout shapes on at least eight first-metal gridlines of first-metal vertical grid.
  94. Becker, Scott T.; Smayling, Michael C., Semiconductor chip having region including gate electrode features of rectangular shape on gate horizontal grid and first-metal structures of rectangular shape on at least eight first-metal gridlines of first-metal vertical grid.
  95. Kornachuk, Stephen; Mali, James; Lambert, Carole; Becker, Scott T.; Reed, Brian, Semiconductor chip including a chip level based on a layout that includes both regular and irregular wires.
  96. Becker, Scott T.; Mali, Jim; Lambert, Carole, Semiconductor chip including digital logic circuit including at least nine linear-shaped conductive structures collectively forming gate electrodes of at least six transistors with some transistors forming cross-coupled transistor configuration and associated methods.
  97. Becker, Scott T.; Mali, Jim; Lambert, Carole, Semiconductor chip including digital logic circuit including at least six transistors with some transistors forming cross-coupled transistor configuration and associated methods.
  98. Becker, Scott T.; Mali, Jim; Lambert, Carole, Semiconductor chip including digital logic circuit including linear-shaped conductive structures having electrical connection areas located within inner region between transistors of different type and associated methods.
  99. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including integrated circuit defined within dynamic array section.
  100. Becker, Scott T.; Mali, Jim; Lambert, Carole, Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same.
  101. Becker, Scott T.; Mali, Jim; Lambert, Carole, Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same.
  102. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including integrated circuit including at least five gate level conductive structures having particular spatial and electrical relationship and method for manufacturing the same.
  103. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including integrated circuit including four transistors of first transistor type and four transistors of second transistor type with electrical connections between various transistors and methods for manufacturing the same.
  104. Becker, Scott T.; Mali, Jim; Lambert, Carole, Semiconductor chip including region having cross-coupled transistor configuration with offset electrical connection areas on gate electrode forming conductive structures and at least two different inner extension distances of gate electrode forming conductive structures.
  105. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including region having integrated circuit transistor gate electrodes formed by various conductive structures of specified shape and position and method for manufacturing the same.
  106. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including region having rectangular-shaped gate structures and first metal structures.
  107. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including region having rectangular-shaped gate structures and first-metal structures.
  108. Becker, Scott T.; Smayling, Michael C., Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods.
  109. Becker, Scott T.; Smayling, Michael C., Semiconductor device with dynamic array sections defined and placed according to manufacturing assurance halos.
  110. Holst, John C.; Wen, ShiJie; Wong, Richard J., Soft error robust low power latch device layout techniques.
  111. Saika, Shunji, Standard cell library and semiconductor integrated circuit.
  112. Smayling, Michael C., Super-self-aligned contacts and method for making the same.
  113. Smayling, Michael C., Super-self-aligned contacts and method for making the same.
  114. Smayling, Michael C., Super-self-aligned contacts and method for making the same.
  115. Smayling, Michael C., Super-self-aligned contacts and method for making the same.
  116. Young Bae Choi KR, Synchronous type flip-flop circuit of semiconductor device.
  117. Bonsels, Stefan; Padeffke, Martin; Werner, Tobias; Woerner, Alexander, Topology for a n-way XOR/XNOR circuit.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로