초록

A method of manufacturing the semiconductor memory comprises element described below;

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of manufacturing a nonvolatile semiconductor memory comprising:forming a first insulating layer on a semiconductor substrate;forming a first polysilicon layer, as a floating gate, on the first insulating layer, the first polysilicon layer including a first low-

[ What is claimed is:] [1.]1. A method of manufacturing a nonvolatile semiconductor memory comprising:forming a first insulating layer on a semiconductor substrate;forming a first polysilicon layer, as a floating gate, on the first insulating layer, the first polysilicon layer including a first low-impurity polysilicon portion facing the first insulating layer, a high-impurity polysilicon portion, and a second low-impurity polysilicon portion;forming a second insulating layer on the second low-impurity polysilicon portion, including sequentially forming a silicon oxide film using low pressure-chemical vapor deposition, a silicon nitride film, and a silicon oxide film; andforming a second polysilicon layer, as a control gate, on the second insulating layer.