초록 ▼

A new method is provided for creating an aluminum pad on the surface of a semiconductor substrate. A passivation layer is deposited over the surface of the substrate; a layer of TaN is deposited over the passivation layer. A masked layer of aluminum is next deposited; this layer of aluminum is patte

A new method is provided for creating an aluminum pad on the surface of a semiconductor substrate. A passivation layer is deposited over the surface of the substrate; a layer of TaN is deposited over the passivation layer. A masked layer of aluminum is next deposited; this layer of aluminum is patterned such that the surface of the barrier layer that aligns with the alignment marker remains free of aluminum. Under the first embodiment of the invention, the exposed surface of the layer of TaN is etched to reduce the thickness of the layer of TaN to the point where the alignment marker is visible. Under the second embodiment of the invention, the exposed surface of the layer of TaN is oxidized to form a layer of Ta.sub.2 O.sub.5 over this surface; this layer of Ta.sub.2 O.sub.5 is transparent making the alignment marker visible. For both embodiments of the invention the surface area of the deposited aluminum can be roughened in order to enhance connect reliability for applications where the aluminum pad is used for metal interconnects.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of forming an aluminum pad on the surface of a semiconductor substrate said aluminum pad overlying and essentially being aligned with an alignment marker in the surface of said substrate, comprising the steps of:providing a semiconductor substrate said substrat

[ What is claimed is:] [1.]1. A method of forming an aluminum pad on the surface of a semiconductor substrate said aluminum pad overlying and essentially being aligned with an alignment marker in the surface of said substrate, comprising the steps of:providing a semiconductor substrate said substrate having been provided with one or more alignment markers in its surface;depositing a passivation layer over the surface of said substrate thereby including the surface of said alignment markers;depositing a barrier layer over the surface of said passivation layer;depositing a masked layer of aluminum over said barrier layer thereby leaving portions of said barrier layer exposed; andperforming an etch of said exposed surface of said barrier layer.