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A process for cutting a trench in a silicon monocrystal in areas defined by a mask comprises forming a mask that defines an etched area on the surface of a monocrystalline silicon wafer which iseventually covered by a thin layer of oxide. Next, ions are implanted with a kinetic energy and in a dose

A process for cutting a trench in a silicon monocrystal in areas defined by a mask comprises forming a mask that defines an etched area on the surface of a monocrystalline silicon wafer which iseventually covered by a thin layer of oxide. Next, ions are implanted with a kinetic energy and in a dose sufficient to amorphize the silicon down to a predefined depth within the defined area, while maintaining the temperature of the wafer sufficiently low to prevent relaxation of point defects produced in the silicon and to prevent diffusion of the implanted ions in the crystal lattice of the silicon adjacent to the amorphized region. Dislodgment and expulsion of the amorphized portion in correspondence with interface with the adjacent crystal lattice of the silicon is initiated by heating the implanted wafer.

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[ That which is claimed is:] [1.]1. A process for forming a trench in a silicon wafer, the process comprising the steps of:forming a mask that defines an etch area on a surface of the silicon wafer to be eventually covered by a thin layer of oxide;implanting ions with a kinetic energy and in a dose

[ That which is claimed is:] [1.]1. A process for forming a trench in a silicon wafer, the process comprising the steps of:forming a mask that defines an etch area on a surface of the silicon wafer to be eventually covered by a thin layer of oxide;implanting ions with a kinetic energy and in a dose sufficient to amorphize the silicon to a depth within the defined etch area, while maintaining the temperature of the silicon wafer at less than about -80.degree. C. to prevent relaxation of point defects produced in the silicon and to prevent diffusion of the implanted ions in a crystal lattice of the silicon adjacent to the amorphized region; andheating the implanted wafer causing dislodgment and expulsion of the amorphized region in correspondence with an interface with the adjacent crystal lattice to thereby form the trench.