초록 ▼

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH.sub.3 SiH.sub.3, or dimethylsilane, (CH.sub.3).sub.2 SiH.sub.2, and nitrous oxide, N.sub.2 O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

대표청구항 ▼

[ What is claimed is:] [1.]1. A process for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting one or more silicon compounds with an oxidizing gas while applying RF power to deposit the low dielectric constant film on the semiconductor substrate, wherein each

[ What is claimed is:] [1.]1. A process for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting one or more silicon compounds with an oxidizing gas while applying RF power to deposit the low dielectric constant film on the semiconductor substrate, wherein each silicon compound comprises from one to three alkyl groups bonded to silicon and at least one silicon-hydrogen bond, and wherein the low dielectric constant film is located between conductive materials and retains sufficient silicon-carbon bonds to have a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less.