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Copper metallization structure and method of construction

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
출원번호 US-0184579 (1998-11-03)
발명자 / 주소
  • Oskam Gerko
  • Searson Peter C.
  • Vereecken Philippe M.
  • Long John G.
  • Hoffmann Peter M.
출원인 / 주소
  • The John Hopkins University
대리인 / 주소
    Dickstein Shapiro Morin & Oshinsky LLP
인용정보 피인용 횟수 : 17  인용 특허 : 24

초록

The invention is directed to the use of copper as via and interconnect structures for an integrated circuit. The process in accordance with a preferred embodiment produces an interconnect layer of continuous copper with superior adhesion while requiring only a minimum number of steps for its product

대표청구항

[ What is claimed as new and desired to be protected by Letters Patent of the United States is:] [1.]1. A process of fabricating a conductive layer on a substrate, the process comprising the steps of:preparing a boundary layer on the substrate; anddepositing a conductive layer directly on the bounda

이 특허에 인용된 특허 (24)

  1. Bindra, Perminder S.; David, Allan P.; Galasco, Raymond T.; Gasdik, Charles E.; Light, David N.; Pickar, Paul B., Copper plating bath having increased plating rate, and method.
  2. Polan Ned W. (Madison CT) Chao Chung-Yao (Hamden CT), Electrochemical treatment of copper for improving its bond strength.
  3. Oxley James E. (71 Edgehill Rd. New Haven CT 06511), Electrolytic regeneration of acid cupric chloride etchant.
  4. Brady Michael J. (Brewster NY) Farrell Curtis E. (Brewster NY) Kang Sung K. (Chappaqua NY) Marino Jeffrey R. (Clifton Park NY) Mikalsen Donald J. (Carmel NY) Moskowitz Paul A. (Yorktown Heights NY) O, Electronic devices having metallurgies containing copper-semiconductor compounds.
  5. Kounaves Samuel P. (Winchester MA) Robbat ; Jr. Albert (Andover MA) Davies Geoffrey (Lexington MA), Metal, metal alloy, and metal oxide formation by electrodeposition of polymetalllic complexes.
  6. Schuster Virgil E. (Scottsdale) Asher ; Sr. Reginald K. (Scottsdale) Patel Bhagubhai D. (Tempe AZ), Method and apparatus for adjusting plating solution flow characteristics at substrate cathode periphery to minimize edge.
  7. Lin Jing-Chie,TWX ; Lin Jyh-Yeong,TWX ; Chen Tai-Hong,TWX ; Yang Fong-Ru,TWX ; Chen Jyh-Herng,TWX, Method for preparing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from zinc-containing waste article.
  8. Dubin Valery ; Nogami Takeshi, Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate.
  9. Nogami Takeshi ; Dubin Valery ; Cheung Robin, Method of electroplating a copper or copper alloy interconnect.
  10. Gardner Donald S., Method of fabricating a barrier against metal diffusion.
  11. Zhao Bin, Method of making a damascene metallization.
  12. Holmes Robert E. (Portland OR) Zimmerman Robert R. (Beaverton OR), Method of making a metalized substrate having a thin film barrier layer.
  13. Bindra Perminder S. (Ossining NY) Light David N. (Putnam Valley NY), Method of manufacture employing electrochemically dispersed platinum catalysts deposited on a substrate.
  14. Chan Lap ; Zheng Jia Zhen,SGX, Method of manufacturing copper interconnect with top barrier layer.
  15. Huang Yung-Sheng (Hsin-chu TWX) Tsai Nun-Sian (Hsinchu TWX), Multi-layered tungsten depositions for contact hole filling.
  16. Aboelfotoh Mohamed Osama ; Krusin-Elbaum Lia ; Sun Yuan-Chen, Multilevel electronic structures containing copper layer and copper-semiconductor layers.
  17. Simon Andrew H. ; Uzoh Cyprian E., Open-bottomed via liner structure and method for fabricating same.
  18. Luce Betty M. (Willowick OH) Berdan Betty L. (Willowick OH), Process and apparatus for electroplating copper foil.
  19. Mll Karl (Volketswil-Kindhausen CHX), Process for applying a structured surface coating on a component.
  20. Zhang Jiming ; Denning Dean J., Process for forming a semiconductor device.
  21. Gilton Terry L. (Boise ID) Tuttle Mark E. (Boise ID) Cathey David A (Boise ID), Process for metallizing integrated circuits with electrolytically-deposited copper.
  22. Schmidt Ferenc J. (Ardmore PA), Process for the electrolytic formation of lead dioxide solar absorption coating.
  23. Henrie ; Thomas A. ; Lindstrom ; Roald E. ; Lei ; Kenneth P. V., Recovery of copper and nickel from alloys.
  24. Poris Jaime (409 Capitola Ave. Capitola CA 95010), Selective metal electrodeposition process.

이 특허를 인용한 특허 (17)

  1. Weidman, Timothy W.; Wijekoon, Kapila P.; Zhu, Zhize; Gelatos, Avgerinos V. (Jerry); Khandelwal, Amit; Shanmugasundram, Arulkumar; Yang, Michael X.; Mei, Fang; Moghadam, Farhad K., Contact metallization scheme using a barrier layer over a silicide layer.
  2. Hu, Yongjun Jeff, Dynamic random access memory device and electronic systems.
  3. Medeiros, Maria G.; Dow, Eric G.; Bessette, Russell R.; Cichon, James M., Electrocatalytic cathode device of palladium and iridium on a high density or porous carbon support and a method for making such a cathode.
  4. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  5. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  6. Daviot, Jérôme; Gonzalez, José, Electroplating composition for coating a substrate surface with a metal.
  7. Monchoix, Hervé; Raynal, Frédéric; Daviot, Jérôme; Gonzalez, José, Electroplating method for coating a substrate surface with a metal.
  8. Ying-Ho Chen TW; Syun-Ming Jang TW; Jih-Churng Twu TW; Tsu Shih TW, Elimination of electrochemical deposition copper line damage for damascene processing.
  9. Dabral, Sanjay; Pant, Anil K., Fabrication of an ion exchange polish pad.
  10. Vereecken, Philippe M.; Basker, Veeraraghavan S.; Cabral, Jr., Cyril; Cooper, Emanuel I.; Deligianni, Hariklia; Frank, Martin M.; Jammy, Rajarao; Paruchuri, Vamsi Krishna; Saenger, Katherine L.; Shao, Xiaoyan, Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow.
  11. Vereecken,Philippe M.; Basker,Veeraraghavan S.; Cabral, Jr.,Cyril; Cooper,Emanuel I.; Deligianni,Hariklia; Frank,Martin M.; Jammy,Rajarao; Paruchuri,Vamsi Krishna; Saenger,Katherine L.; Shao,Xiaoyan, Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow.
  12. Dabral, Sanjay; Pant, Anil K., Method and apparatus for electrodialytic chemical mechanical polishing and deposition.
  13. Dabral, Sanjay; Pant, Anil K., Method and apparatus to recondition an ion exchange polish pad.
  14. Andricacos, Panayotis; Deligianni, Hariklia; Horkans, Wilma Jean; Kwietniak, Keith T.; Lane, Michael; Malhotra, Sandra G.; McFeely, Fenton Read; Murray, Conal; Rodbell, Kenneth P.; Vereecken, Philipp, Method for electroplating on resistive substrates.
  15. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
  16. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
  17. Hu, Yongjun Jeff, Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions.
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