초록 ▼

Each of the n-type and p-type thermoelectric semiconductors (8, 9) are regularly arranged so that both end faces thereof form approximately flush interconnection end faces (3a, 3b) and are joined together through insulation, and interconnection electrodes (7) for alternately electrically connecting

Each of the n-type and p-type thermoelectric semiconductors (8, 9) are regularly arranged so that both end faces thereof form approximately flush interconnection end faces (3a, 3b) and are joined together through insulation, and interconnection electrodes (7) for alternately electrically connecting the n-type and p-type thermoelectric semiconductors (8, 9) are formed on both interconnection end faces (3a, 3b) to electrically connect the n-type and p-type thermoelectric semiconductors in series, thus obtaining a thermoelectric device block (3). A pair of connecting electrodes (6a, 6b) is formed to be electrically connected to the respective thermoelectric semiconductors corresponding to one end and the other end of a set of thermoelectric semiconductors connected in series in the thermoelectric device block (3). One of the interconnection end faces (3a) of the thermoelectric device block (3) is inserted into an opening (2a) of a flexible printed circuit (2) and then fixed onto an upper face of a thermal conduction plate (11) through an insulating layer so that a pair of the connecting electrodes (6a, 6b) is electrically connected to a pair of input/output electrodes (10a, 10b) formed on the flexible printed circuit (2), thus obtaining a thermoelectric device (20).

대표청구항 ▼

[ What is claimed is:] [1.]1. A thermoelectric device, comprising:a thermoelectric device block in which thermoelectric semiconductors of a first conductivity-type and thermoelectric semiconductors of a second conductivity-type, which have a column-shape of equal length to each other, are regularly

[ What is claimed is:] [1.]1. A thermoelectric device, comprising:a thermoelectric device block in which thermoelectric semiconductors of a first conductivity-type and thermoelectric semiconductors of a second conductivity-type, which have a column-shape of equal length to each other, are regularly arranged to form approximately flush interconnection end faces at both end faces of the thermoelectric semiconductors, and jointed together through an insulating adhesive, and the thermoelectric semiconductors of the first and second conductivity-types are electrically connected in series on said interconnection end faces by interconnection electrodes;a pair of connecting electrodes which are electrically connected to the respective thermoelectric semiconductors which correspond to one end and the other end of a set of said thermoelectric semiconductors connected in series in the thermoelectric device block;a thermal conduction plate having an upper face larger than an outer shape of said thermoelectric device block, and having an insulating layer, which is made of any one of metal and insulation having high thermal conductivity, on at lest one said upper face thereof; anda pair of input/output electrodes formed on the upper face of the thermal conduction plate to be electrically insulated from the thermal conduction plate,wherein one of the interconnection end faces of said thermoelectric device block being fixed onto the upper face of said thermal conduction plate to establish an electrical connection of said each connecting electrode with said each input/output electrode through a conductive member.