초록 ▼

The present invention relates to an optical integrated circuit; and, more particularly, to a method for preparing an improved hybrid optical integrated circuit which is capable of accommodating optical waveguides, optical devices, such as light emitting devices and light receiving devices, and optic

The present invention relates to an optical integrated circuit; and, more particularly, to a method for preparing an improved hybrid optical integrated circuit which is capable of accommodating optical waveguides, optical devices, such as light emitting devices and light receiving devices, and optical fibers in an effective manner. The present invention has the advantages of minimizing horizontal misalignment error between the SOI waveguide rib area, the V-groove etch window and the alignment marks, decreasing the manufacturing cost by passively aligning the waveguides, the optical devices and the optical fibers on a single substrate. Also, the present invention has an effect of reducing fresnel reflection loss by providing the LPCVD silicon nitride layer capable of being used as an anti-reflection coating layer at both ends of the waveguide.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for fabricating a hybrid optical integrated circuit, the method comprising the steps of:a) providing a SOI wafer including a silicon substrate, a buried insulating layer and a single crystal silicon layer;b) selectively etching the single crystal silicon layer,

[ What is claimed is:] [1.]1. A method for fabricating a hybrid optical integrated circuit, the method comprising the steps of:a) providing a SOI wafer including a silicon substrate, a buried insulating layer and a single crystal silicon layer;b) selectively etching the single crystal silicon layer, thereby forming a SOI slab;c) forming a silicon nitride layer and an etching mask layer on the resulting structure, wherein the silicon nitride layer is formed by a low pressure chemical vapor deposition process;d) selectively etching the etching mask layer and the silicon nitride layer to expose the single crystal silicon layer in the SOI slab except a rib area and simultaneously forming a V-groove etch window for aligning an optical fiber and marks for aligning an optical device, wherein the a rib region in the SOI slab is covered with the silicon nitride layer and the etching mask layer;e) selectively etching the exposed single crystal silicon layer to form a SOI rib;f) selectively etching the etching mask layer and the silicon nitride layer on the SOI rib;g) forming a cladding layer for an optical waveguide on a surface of the SOI slab and the SOI rib;h) anisotropically etching the silicon substrate exposed through the V-groove etch window to form an optical fiber guiding V-groove; andi) selectively removing the etching mask layer positioned at both end facets of the SOI slab and exposing the silicon nitride layer.