초록 ▼

Circuit and circuit carries include a dielectric substrate having a conductive layer mounted thereon. The conductive layer is patterned to define a plurality of spaced apart conductive elements. A static charge dissipative layer is in contact with and extending between at least two of the conductive

Circuit and circuit carries include a dielectric substrate having a conductive layer mounted thereon. The conductive layer is patterned to define a plurality of spaced apart conductive elements. A static charge dissipative layer is in contact with and extending between at least two of the conductive elements. The static charge dissipative layer has a surface resistivity of between about 1.times.10.sup.5 and about 1.times.10.sup.10 ohms/.quadrature.. The static charge dissipative layer is made of a material selected from the group consisting of diamond-like carbon, silicon nitride, boron nitride, boron trifluoride, silicon carbide and silicon dioxide. Circuits and circuit carriers according to the present invention allow static charges to be controllably and reliably dissipated from a surface of the circuit or circuit carrier such that the potential for damage from static discharge to electrical components connected to the circuit is reduced.

대표청구항 ▼

[ What is claimed is:] [1.]1. A circuit, comprising:a dielectric substrate;a conductive layer mounted on a surface of the dielectric substrate, the conductive layer patterned to define a plurality of spaced apart conductive elements; anda static charge dissipative layer in contact with and extending

[ What is claimed is:] [1.]1. A circuit, comprising:a dielectric substrate;a conductive layer mounted on a surface of the dielectric substrate, the conductive layer patterned to define a plurality of spaced apart conductive elements; anda static charge dissipative layer in contact with and extending between at least two of the conductive elements, the static charge dissipative layer having a thickness of from about 200 .ANG.ngstroms to about 2000 .ANG.ngstroms, a surface resistivity of between about 1.times.10.sup.5 and about 1.times.10.sup.10 ohms/.quadrature. and being made of a material selected from the group consisting of diamond-like carbon, silicon nitride, boron nitride, boron trifluoride, silicon carbide and silicon dioxide.