초록 ▼

A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bond

A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

대표청구항 ▼

[ What is claimed is:] [1.]1. An electroplating bath for depositing a low-Me concentration, copper-Me alloy layer on the surface of a microelectronic workpiece, where Me is a metal other than copper, the bath comprising:MeSO.sub.4 as a source of the metal Me;CuSO.sub.4 as a source of copper, wherein

[ What is claimed is:] [1.]1. An electroplating bath for depositing a low-Me concentration, copper-Me alloy layer on the surface of a microelectronic workpiece, where Me is a metal other than copper, the bath comprising:MeSO.sub.4 as a source of the metal Me;CuSO.sub.4 as a source of copper, wherein MeSO.sub.4 and CuSO.sub.4 are included at a ratio of MeSO.sub.4 :CuSO.sub.4 of at least 1:1;(NH.sub.4).sub.2 SO.sub.4 as a complexing agent; andNH.sub.4 OH as a pH adjuster.