초록 ▼

A method for manufacturing a semiconductor device comprises forming a silicon nitride film, a BPSG film, and a SOG silicon oxide film containing boron or phosphorous on a transistor element, thermally treating the resultant wafer in a pressurized steam ambient, and thermally treating the wafer in an

A method for manufacturing a semiconductor device comprises forming a silicon nitride film, a BPSG film, and a SOG silicon oxide film containing boron or phosphorous on a transistor element, thermally treating the resultant wafer in a pressurized steam ambient, and thermally treating the wafer in an inactive gas ambient. The first thermal treatment causes hydrolysis of the SOG film to form a gel state of the SOG film, whereas the second thermal treatment hardens the SOG film by removing H.sub.2 O content in the SOG film. The phosphorous or boron in the SOG film weakens the bonds in --Si--O--Si-- chains in the SOG film to assist the separation of the --Si--O--Si-- chains and the planarization of the SOG film.

대표청구항 ▼

[ What is claimed is:] [6.]6. A method of manufacturing a semiconductor device, comprising:forming on the semiconductor device a cured spin-on-glass film containing at least one of: phosphorus and boron;changing at least a portion of the cured spin-on-glass film to a gel state by exposing the cured

[ What is claimed is:] [6.]6. A method of manufacturing a semiconductor device, comprising:forming on the semiconductor device a cured spin-on-glass film containing at least one of: phosphorus and boron;changing at least a portion of the cured spin-on-glass film to a gel state by exposing the cured spin-on-glass film to an ambient pressurized steam causing hydrolysis of the portion of the cured spin-on-glass film to the gel state; andhardening the spin-on-glass film in an inactive gas ambient.