초록 ▼

A method for making an ultra-thin material layer bonded to a substrate, has the steps: (a) growing an etch stop layer on a first substrate; (b) growing an ultra-thin material layer on the etch stop layer; (c) implanting an implant gas to a selected depth into the first substrate; (d) bonding the ult

A method for making an ultra-thin material layer bonded to a substrate, has the steps: (a) growing an etch stop layer on a first substrate; (b) growing an ultra-thin material layer on the etch stop layer; (c) implanting an implant gas to a selected depth into the first substrate; (d) bonding the ultra-thin material layer to a second substrate; (e) treating the first substrate to cause the first substrate to split at the selected depth; (f) etching remaining portion of first substrate to expose the etch stop layer, and (g) etching the etch stop layer to expose the ultra-thin material layer.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for making an ultra-thin material bonded to a substrate, comprising the steps:growing an etch stop layer on a first substrate;growing an ultra-thin material layer on said etch stop layer;implanting an implant ion to a selected depth into said first substrate;bo

[ What is claimed is:] [1.]1. A method for making an ultra-thin material bonded to a substrate, comprising the steps:growing an etch stop layer on a first substrate;growing an ultra-thin material layer on said etch stop layer;implanting an implant ion to a selected depth into said first substrate;bonding said ultra-thin material layer to a second substrate;splitting said first substrate at said selected depth; thereby forming a freestanding portion of said first substrate, separated from a remaining portion of said first substrate; andheating to a temperature less than 650.degree. C.