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Laminated SOI substrate and producing method thereof

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/46
출원번호 US-0187846 (1998-11-06)
우선권정보 JP0307719 (1997-11-10)
발명자 / 주소
  • Okonogi Kensuke,JPX
출원인 / 주소
  • NEC Corporation, JPX
대리인 / 주소
    Hayes, Soloway, Hennessey, Grossman & Hage, PC
인용정보 피인용 횟수 : 25  인용 특허 : 11

초록

An insulation film is formed on a first single crystal silicon substrate, e.g., a hydrogen anneal substrate, an intrinsic gettering substrate and an epitaxial substrate. Hydrogen implantation is carried out from a surface of this insulation film, thereby forming a hydrogen implantation region in the

대표청구항

[ What is claimed is:] [1.]1. A method for producing a laminated SOI substrate, comprising the steps of:forming an insulation film on a surface of a first single crystal silicon substrate which has one kind of substrate selected from a group consisting of a hydrogen anneal substrate, an intrinsic ge

이 특허에 인용된 특허 (11)

  1. Henley Francois J. ; Cheung Nathan W., Gettering technique for silicon-on-insulator wafers.
  2. Lee Sahng Kyoo,KRX ; Park Sang Kyun,KRX, Method for fabricating semiconductor wafers.
  3. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  4. Mizuno Bunji (Ikoma JPX) Kubota Masafumi (Osaka JPX), Method for removing impurities existing in semiconductor substrate.
  5. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.
  6. Naruse Hiroshi (Yokohama JPX), Method of manufacturing a bonded semiconductor substrate and a dielectric isolated bipolar transistor.
  7. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
  8. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  9. Kenney Donald M., SOI fabrication method.
  10. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
  11. Li Jianming (Upton NY), Type silicon material with enhanced surface mobility.

이 특허를 인용한 특허 (25)

  1. Emi Ishida, Gate formation method for reduced poly-depletion and boron penetration.
  2. Joly, Jean-Pierre; Ulmer, Laurent; Parat, Guy, Integrated circuit on high performance chip.
  3. Fournel, Franck; Moriceau, Hubert; Lagahe, Christelle, Method for making a stressed structure designed to be dissociated.
  4. Deguet, Chrystel; Clavelier, Laurent, Method for making a thin-film element.
  5. Aspar, Bernard; Lagahe, Christelle; Ghyselen, Bruno, Method for making thin layers containing microcomponents.
  6. Tauzin, Aurélie; Dechamp, Jérôme; Mazen, Frédéric; Madeira, Florence, Method for preparing thin GaN layers by implantation and recycling of a starting substrate.
  7. Bernard Aspar FR; Michel Bruel FR; Claude Jaussaud FR; Chrystelle Lagahe FR, Method for producing a thin membrane and resulting structure with membrane.
  8. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle; Bourdelle, Konstantin; Tauzin, Aurélie; Fournel, Franck, Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation.
  9. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle, Method of catastrophic transfer of a thin film after co-implantation.
  10. Cayrefourcq,Ian; Mohamed,Nadia Ben; Lagahe Blanchard,Christelle; Nguyen,Nguyet Phuong, Method of detaching a thin film at moderate temperature after co-implantation.
  11. Tauzin, Aurélie; Faure, Bruce; Garnier, Arnaud, Method of detaching a thin film by melting precipitates.
  12. Mitani,Kiyoshi; Yokokawa,Isao, Method of fabricating SOI wafer.
  13. Deguet, Chrystel; Clavelier, Laurent; Dechamp, Jerome, Method of transferring a thin film onto a support.
  14. Fournel, Franck, Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer.
  15. Ghyselen, Bruno; Letertre, Fabrice, Methods for transferring a useful layer of silicon carbide to a receiving substrate.
  16. Ghyselen,Bruno; Letertre,Fabrice, Methods for transferring a useful layer of silicon carbide to a receiving substrate.
  17. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film.
  18. Moriceau,Hubert; Bruel,Michel; Aspar,Bernard; Maleville,Christophe, Process for the transfer of a thin film.
  19. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film comprising an inclusion creation step.
  20. Agnello, Paul D.; Bedell, Stephen W.; Dennard, Robert H.; Domenicucci, Anthony G.; Fogel, Keith E.; Sadana, Devendra K., Relaxed low-defect SGOI for strained SI CMOS applications.
  21. Abbondanza, Giuseppe, Semiconductor wafer and method for manufacturing the same.
  22. Abbondanza, Giuseppe, Semiconductor wafer and method for manufacturing the same.
  23. Abe, Takao; Matsuura, Takashi; Murota, Junichi, Semiconductor wafer and method for producing the same.
  24. Moriceau, Hubert; Aspar, Bernard; Margail, Jacques, Stacked structure and production method thereof.
  25. Tauzin,Aur��lie, Thin film splitting method.
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