초록 ▼

A composite wiring structure (10) for use with at least one semiconductor device (16). The composite wiring structure having a first conductive member (12) upon which the semiconductor device can be mounted for electrical connection thereto. A dielectric member (20), made of ceramic or organo-cerami

A composite wiring structure (10) for use with at least one semiconductor device (16). The composite wiring structure having a first conductive member (12) upon which the semiconductor device can be mounted for electrical connection thereto. A dielectric member (20), made of ceramic or organo-ceramic composite material, is bonded to the first conductive member (12) and contains embedded therein a conductive network (24) and a thermal distribution network (26). A second conductive member (32) may be incorporated with the composite wiring structure, with a capacitor (64) being electrically connected between the conductive network (24) and the second conductive member (32). Bonding between the dielectric member and the conductive members may be in the form of a direct covalent bond formed at a temperature insufficient to adversely effect the structural integrity of the conductive network and the thermal distribution network.

대표청구항 ▼

[ We claim:] [1.]1. A composite structure for management of electrical and thermal conduction from at least one semiconductor device, comprising:a composite, with at least one electrical conductor forming a portion of an electrical network and at least one thermal conductor forming a part of a therm

[ We claim:] [1.]1. A composite structure for management of electrical and thermal conduction from at least one semiconductor device, comprising:a composite, with at least one electrical conductor forming a portion of an electrical network and at least one thermal conductor forming a part of a thermal network, said at least one electrical conductor bonded to an electrically insulating dielectric member, and said dielectric member encompassing the electrical and thermal networks;said electrical and thermal conductors and networks formed thereby being arranged within said dielectric member in electrical isolation from each other;said composite made by in-situ formation of the dielectric around said electrical network and said thermal network and said dielectric member being bonded to said at least one electrical conductor via a covalent bond formed at a temperature less than 475 degrees C.; andthe structure as a whole being constructed and arranged to enable heat transfer from the electrical network and the semiconductor device to and through the thermal network.