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Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01R-027/26
  • G01N-027/62
출원번호 US-0231043 (1999-01-14)
발명자 / 주소
  • Lundquist Paul Matthew
  • Nguyen Son Van
  • Singh Manmohanjit
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Altera Law Group, LLC
인용정보 피인용 횟수 : 22  인용 특허 : 17

초록

A method and apparatus that provides in-situ monitoring of both the ion flux and the ion energy distribution of plasma processes to determine the endpoint of the etch process or the integrity and reproducibility of the deposition process where ion bombardment and energy distribution play critical ro

대표청구항

[ What is claimed is:] [1.]1. A plasma endpoint probe comprising at least one capacitance sensor disposed inside a plasma reactor at a first position for detecting ion flux emanating from a plasma within the plasma reactor that strikes a surface of the capacitance sensor inside the plasma reactor an

이 특허에 인용된 특허 (17)

  1. Brenner Raul ; Esin Alex J. ; Jones Lawrence J. ; Rosselson Boris, Capacitance level sensor.
  2. Moore James A. ; Sparks Dennis O., Capacitively coupled RF voltage probe having optimized flux linkage.
  3. Barbee Steven G. (Dover Plains NY) Heinz Tony F. (Chappaqua NY) Li Leping (New Paltz NY) Ratzlaff Eugene H. (Hopewell Junction NY), Contactless real-time in-situ monitoring of a chemical etching process.
  4. Jambotkar Chakrapani G. (Hopewell Junction NY) Renbeck Robert B. (Staatsburg NY), Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length.
  5. Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ), In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection.
  6. Barbee Steven G. (Dover Plains NY) Heinz Tony F. (Chappaqua NY) Hsiao Yiping (San Jose CA) Li Leping (Poughkeepsie NY) Ratzlaff Eugene H. (Hopewell Junction NY) Wong Justin W. (South Burlington VT), Measuring film etching uniformity during a chemical etching process.
  7. Barbee Steven G. (Dover Plains NY) Datta Madhav (Yorktown Heights NY) Heinz Tony F. (Chappaqua NY) Li Leping (Poughkeepsie NY) Ratzlaff Eugene H. (Hopewell Junction NY) Shenoy Ravindra V. (Peekskill , Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process.
  8. Gabriel Calvin T. (Cupertino CA), Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system.
  9. Kawasumi Seiji (Shizuoka JPX) Uesugi Akio (Shizuoka JPX), Method and apparatus for electrolytic treatment.
  10. Booth Jean-Paul,FRX ; Braithwaite Nicholas St. John,FRX, Method and device for measuring an ion flow in a plasma.
  11. Sato Arthur (Santa Clara CA) Qian Xue-Yu (Milpitas CA), Method of measuring the amount of capacitive coupling of RF power in an inductively coupled plasma.
  12. Barbee Steven G. (Dover Plains NY) Heinz Tony F. (Chappaqua NY) Hsiao Yiping (San Jose CA) Li Leping (Poughkeepsie NY) Ratzlaff Eugene H. (Hopewell Junction NY) Wong Justin W. (South Burlington VT), Minimizing overetch during a chemical etching process.
  13. Yokota Takashi (Yokohama JPX) Kamikanda Osamu (Yokohama JPX), Plasma processing apparatus using capacitance manometer and pressure control method thereof.
  14. Barbee Steven G. (Dover Plains NY) Heinz Tony F. (Chappaqua NY) Hsiao Yiping (San Jose CA) Li Leping (Poughkeepsie NY) Ratzlaff Eugene H. (Hopewell Junction NY) Wong Justin W. (Burlington VT), Real time measurement of etch rate during a chemical etching process.
  15. Barbee Steven G. (Dover Plains NY) Heinz Tony F. (Chappaqua NY) Hsiao Yiping (San Jose CA) Li Leping (Poughkeepsie NY) Ratzlaff Eugene H. (Hopewell Junction NY) Wong Justin W. (South Burlington VT), Real time measurement of etch rate during a chemical etching process.
  16. Kuwabara Hideshi (Zama JPX), Semiconductor device manufacturing apparatus.
  17. Connell George A. N. (Cupertino CA) Fenner David B. (Menlo Park CA) Boyce James B. (Los Altos CA) Fork David K. (Palo Alto CA), Silicon substrate having an epitaxial superconducting layer thereon and method of making same.

이 특허를 인용한 특허 (22)

  1. Wood, Bingxi Sun; Kawaguchi, Mark N.; Papanu, James S.; Mosely, Roderick C.; Lai, Chiukun Steven; Kao, Chien Teh; Ai, Hua; Wang, Wei W., Cleaning of native oxide with hydrogen-containing radicals.
  2. Satoshi Adachi JP; Kenichi Nakayama JP; Akihito Takahashi JP; Toshihiro Hasegawa JP; Masaaki Nagata JP, Displacement measuring device.
  3. Somekh,Sasson R.; Schweitzer,Marc O.; Forster,John C.; Xu,Zheng; Mosely,Roderick C.; Chin,Barry L.; Grunes,Howard E., End point detection for sputtering and resputtering.
  4. Johal, Sumer S.; Lane, Barton; Gorin, Georges J.; Spruytte, Sylvia G. J. P.; Kieffel, Herve C., End point detection method for plasma etching of semiconductor wafers with low exposed area.
  5. Scanlan, John; Hopkins, Michael B., Endpoint detection in the etching of dielectric layers.
  6. Sandhu, Gurtej S.; Rueger, Neal R., Integrated circuit inspection system.
  7. Sandhu, Gurtej S.; Rueger, Neal R., Integrated circuit inspection system.
  8. Chen, Lee; Lane, Barton; Funk, Merritt; Zhao, Jianping; Sundararajan, Radha, Ion energy analyzer.
  9. Chen, Lee; Xu, Lin; Bravenec, Ronald Victor, Ion energy analyzer and methods of manufacturing and operating.
  10. Funk, Merritt; Chen, Lee; Lane, Barton; Zhao, Jianping; Sundararajan, Radha, Ion energy analyzer and methods of manufacturing the same.
  11. de Gorordo, Alvaro Garcia, Method and apparatus for photon-assisted evaluation of a plasma.
  12. Keil, Douglas; Hudson, Eric; Kimball, Chris; Fischer, Andreas, Method and apparatus to detect fault conditions of plasma processing reactor.
  13. Yang, Jen-Yuan; Chen, Tsai-Yi; Lin, Wen-Bin, Method for detecting end point in plasma etching by impedance change.
  14. Jafarian-Tehrani, Seyed Jafar; Avoyan, Armen, Method for toolmatching and troubleshooting a plasma processing system.
  15. Funk, Merritt; Chen, Lee; Lane, Barton; Zhao, Jianping; Sundararajan, Radha, Methods of electrical signaling in an ion energy analyzer.
  16. Samukawa, Seiji; Shinmura, Tadashi; Okigawa, Mitsuru, On-wafer monitoring system.
  17. Booth, Jean-Paul; Nagai, Mikio; Keil, Douglas, Passive capacitively-coupled electrostatic (CCE) probe method for detecting plasma instabilities in a plasma processing chamber.
  18. Makhratchev, Konstantin; Srinivasan, Mukund, Probe for direct wafer potential measurements.
  19. Booth, Jean-Paul; Keil, Douglas, Processing system for detecting in-situ arcing events during substrate processing.
  20. Scullin, Paul; Gahan, David; O'Sullivan, Donal, Sensing of plasma process parameters.
  21. Chen, Zhigang; Marakhtanov, Alexei; Holland, John Patrick, Systems and methods for tailoring ion energy distribution function by odd harmonic mixing.
  22. Chen, Lee; Xu, Lin; Bravenec, Ronald Victor, Two-grid ion energy analyzer and methods of manufacturing and operating.
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