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Electrode means, comprising polymer materials, with or without functional elements and an electrode device formed of said means 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G09G-003/20
출원번호 US-0147844 (1999-03-18)
우선권정보 NO0003390 (1997-07-22)
국제출원번호 PCT/NO98/00212 (1998-07-13)
§371/§102 date 19990318 (19990318)
국제공개번호 WO-9908325 (1999-02-18)
발명자 / 주소
  • Inganas Olle Werner,SEX
  • Pede Danilo,ITX
  • Granstrom Magnus,SEX
  • Leistad Geirr Ivarsson,NOX
출원인 / 주소
  • Thin Film Electronics ASA, NOX
대리인 / 주소
    Jacobson Holman, PLLC
인용정보 피인용 횟수 : 46  인용 특허 : 7

초록

In an electrode device for addressing a functional element a layer of electrical isolating materials is provided between first and second electrodes intersecting without direct physical or electrical contact and forming a bridge structure. Over both electrodes an electrical conducting or semiconduct

대표청구항

[ What is claimed is:] [1.]1. An electrode means for addressing of a functional element comprisinga first and a second electrode, the first electrode being provided in the form of a substantially strip structure of an electrical conducting material, the second electrode being provided over the first

이 특허에 인용된 특허 (7)

  1. Johnson Robert R. (Franklin MI), Electronic matrix arrays and method for making the same.
  2. Hawkins Todd R. ; Geer Steven R., Method for applying a coating that acts as an electrolytic barrier and a cathodic corrosion prevention system.
  3. Owen Alan E. (Edinburgh GB6) Sarrabayrouse Gerard (Tolouse FRX) LeComber Peter G. (Dundee GB6) Spear Walter E. (Dundee GB6), Non-volatile amorphous semiconductor memory device utilizing a forming voltage.
  4. Guha Supratik ; Haight Richard Alan ; Karasinski Joseph M. ; Troutman Ronald R., Organic light emitting diodes having transparent cathode structures.
  5. Bergeron David L. ; Curtin Christopher J. ; Macaulay John M., Technique for increasing manufacturing yield of matrix-addressable device.
  6. Thakoor Anilkumar P. (Pasadena CA) Lambe John (Altadena CA) Moopen Alexander (Pasadena CA), Thin film memory matrix using amorphous and high resistive layers.
  7. Shiratsuki Yoshiyuki (Ebina JPX) Yamaguchi Yoshinori (Ebina JPX) Hayashi Kazuhiro (Ebina JPX) Niitsu Takahiro (Ebina JPX), Voltage non-linear device and liquid crystal display device incorporating same.

이 특허를 인용한 특허 (46)

  1. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Addressable and electrically reversible memory switch.
  2. Farley, Richard O.; Tartz, Robert S.; Vartak, Aniket A., Associating user emotion with electronic media.
  3. Shi, Yijian, Cavity electroluminescent devices and methods for producing the same.
  4. Bureau,Christophe; Perruchot,Fran?ois; Kergueris,Christophe, Coating support and method for the selective coating of conductive tracks on one such support.
  5. Lee, Dong-Won; Wang, Jianpu; Rhee, Jung-Soo; Chung, Jin-Koo; Hong, Song-Mi; Choi, Beohm-Rock, Display device and fabricating method thereof.
  6. Yeung, Steven Wai Leung; Kwok, Siu Kwan; Lee, James G. N.; Chang, Celene, Driving scheme for liquid crystal display.
  7. Vartak, Aniket A.; Tartz, Robert S.; Caskey, Mark S., Dynamically configurable biopotential electrode array to collect physiological data.
  8. Shi, Yijian, Electroluminescent devices employing organic cathodes.
  9. Nishikawa, Ryuji; Maeda, Kazuyuki, Electroluminescent display device.
  10. Nishikawa, Ryuji; Maeda, Kazuyuki, Electroluminescent display device.
  11. Kwak, Won Kyu, Flat panel display.
  12. Mandell, Aaron; Perlman, Andrew, Floating gate memory device using composite molecular material.
  13. Shi, Yijian, High efficiency electroluminescent devices and methods for producing the same.
  14. Aschwanden, Manuel; Niederer, David; Schmidhausler, Thomas; Romer, Christoph; Kern, Thomas; Yang, Shu-Heng; King, Charles; Kirchhoefer, Dennis Ray; Warren, Daniel, Lens assembly apparatus and method.
  15. Bueler, Michael; Aschwanden, Manuel; Gratzel, Chauncey; Niederer, David, Lens system and method.
  16. Büeler, Michael; Aschwanden, Manuel; Gratzel, Chauncey; Niederer, David, Lens systems and method.
  17. Li, Jian; Mu, Xiao-Chun; Isenberger, Mark, Low-voltage and interface damage-free polymer memory device.
  18. Krieger, Juri H.; Yudanov, Nikolai, Memory device.
  19. Krieger, Juri H.; Yudanov, Nikolai, Memory device.
  20. Krieger, Juri H.; Yudanov, Nikolai, Memory device.
  21. Krieger, Juri H.; Yudanoy, Nikolai, Memory device.
  22. Krieger, Juri H.; Yudanov, N. F., Memory device with a self-assembled polymer film and method of making the same.
  23. Krieger, Juri H.; Yudanov, Nikolai, Memory device with active and passive layers.
  24. Krieger, Juri H.; Yudanov, Nikolai, Memory device with active passive layers.
  25. Nishide, Hiroyuki; Honda, Kenji; Yonekuta, Yasunori; Kurata, Takashi; Abe, Shigemoto, Memory element and method for manufacturing same.
  26. Cordoba Matilla, José Luis, Method and apparatus for driving a dielectric elastomer matrix avoiding crosstalk.
  27. Arias,Ana C., Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer.
  28. Arias,Ana C., Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer.
  29. Park, Joon-Young; Kwon, Jang-Hyuk, Method of fabricating organic light emitting display.
  30. Cok, Ronald Steven, Method of making a display device.
  31. Krieger, Juri H.; Yudanov, Nikolay F., Molecular memory cell.
  32. Krieger,Juri H; Yudanov,Nicolay F, Molecular memory cell.
  33. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Molecular memory device.
  34. Kim, Sun Hwa, Organic electroluminescence display with an insulating layer selectively formed.
  35. Furuie, Masamitsu; Kato, Shinichi; Okunaka, Masaaki; Ito, Masato; Sakamoto, Hirotsugu, Organic electroluminescent display device with a light shielding member arranged on an end wall face of a periphery of the substrate.
  36. Kingsborough,Richard P.; Sokolik,Igor, Organic thin film Zener diodes.
  37. Agarwal, Vishnu K.; Rhodes, Howard E., Polymer-based ferroelectric memory.
  38. Agarwal, Vishnu K.; Rhodes, Howard E., Polymer-based ferroelectric memory.
  39. Agarwal,Vishnu K.; Rhodes,Howard E., Polymer-based ferroelectric memory.
  40. Su,Keng Li; Sheu,Shyh Shyuan; Lin,Jan Ruel; Chang,Wei Jen; Kung,Chen Pang, Programmable memory cell and operation method.
  41. Fagard,Pierre, Proximity detection matrix display device.
  42. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Reversible field-programmable electric interconnects.
  43. Bulovic,Vladimir; Mandell,Aaron; Perlman,Andrew, Reversible field-programmable electric interconnects.
  44. Padinger, Franz, Sensor matrix with semiconductor components.
  45. Li,Jian; Mu,Xiao Chun, Stepped structure for a multi-rank, stacked polymer memory device and method of making same.
  46. Hannah, Eric C.; Brown, Michael A., Write-once polymer memory with e-beam writing and reading.
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