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Method of making high-density, high-purity tungsten sputter targets 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B22F-003/14
출원번호 US-0220906 (1998-12-24)
발명자 / 주소
  • Lo Chi-Fung
  • Gilman Paul S.
  • Draper Darryl
출원인 / 주소
  • Praxair Technology, Inc.
대리인 / 주소
    Beiderman
인용정보 피인용 횟수 : 41  인용 특허 : 5

초록

A method is provided for fabricating tungsten sputter targets having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. According to the principles of the present invention, a tungsten powder having a powder size less

대표청구항

[ What is claimed is:] [1.]1. A method of fabricating high-density tungsten sputter targets, comprising the steps of:hot-isostatic-pressing a tungsten powder at a temperature between about 1200.degree. C. and about 1600.degree. C. and a pressure of at least about 15 ksi for at least about 3 hours in

이 특허에 인용된 특허 (5)

  1. Amato Richard A. (Cincinnati OH) Woodfield Andrew P. (Fairfield OH) Gigliotti ; Jr. Michael F. X. (Scotia NY) Hughes John R. (Scotia NY) Perocchi Lee C. (Schenectady NY), Method for developing enhanced texture in titanium alloys, and articles made thereby.
  2. Dunlop John A. (Veradale WA) Rensing Hans (Rossland CAX), Method for making tungsten-titanium sputtering targets and product.
  3. Morgan Ricky D. (Ulster PA) Sylvester Vito P. (Athens PA) Ward Robert L. (Towanda PA), Method for producing a high density metal article.
  4. Masuda Kaoru,JPX ; Taniguchi Shigeru,JPX ; Hiraki Akitoshi,JPX, Sputtering titanium target assembly and producing method thereof.
  5. Yamanobe Takashi (Kanagawa JPX) Satou Michio (Kanagawa JPX) Ishigami Takashi (Kanagawa JPX) Obata Minoru (Tokyo JPX) Kawai Mituo (Kanagawa JPX) Yagi Noriaki (Kanagawa JPX) Maki Toshihiro (Kanagawa JP, Ti-W sputtering target and method for manufacturing same.

이 특허를 인용한 특허 (41)

  1. Senda, Shinichiro; Yamakoshi, Yasuhiro; Ito, Junichi, Barrier film for semiconductor wiring, sintered compact sputtering target and method of producing the sputtering target.
  2. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  3. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  4. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  5. Zhang, Wenjun, Fabrication of B/C/N/O/Si doped sputtering targets.
  6. Zhang,Wenjun, Fabrication of B/C/N/O/Si doped sputtering targets.
  7. Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
  8. Kumar, Prabhat; Wood, Charles; Rozak, Gary; Miller, Steven A.; Zeman, Glen; Wu, Rong-Chein Richard, High density refractory metals and alloys sputtering targets.
  9. Dary, Francois-Charles; Gaydos, Mark; Loewenthal, William; Miller, Steven A.; Rozak, Gary; Volchko, Scott Jeffrey; Zimmermann, Stefan; Stawovy, Michael Thomas, Large-area sputtering targets.
  10. Miller, Steven A.; Kumar, Prabhat, Low-energy method of manufacturing bulk metallic structures with submicron grain sizes.
  11. Zimmermann, Stefan; Papp, Uwe; Kreye, Heinrich; Schmidt, Tobias, Method for coating a substrate surface and coated product.
  12. Nanis, Leonard, Method for fabricating sputter targets.
  13. Nanis,Leonard, Method for fabricating sputter targets.
  14. Rozak, Gary Alan; Gaydos, Mark E.; Hogan, Patrick Alan; Sun, Shuwei, Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium.
  15. Rozak, Gary Alan; Gaydos, Mark E.; Hogan, Patrick Alan; Sun, Shuwei, Method of making molybdenum-containing targets comprising three metal elements.
  16. Miller, Steven A.; Schmidt-Park, Olaf; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan, Methods of forming sputtering targets.
  17. Miller, Steven A.; Shekhter, Leonid N.; Zimmerman, Stefan, Methods of joining metallic protective layers.
  18. Miller, Steven A.; Shekhter, Leonid N.; Zimmermann, Stefan, Methods of joining metallic protective layers.
  19. Miller, Steven A.; Shekhter, Leonid N.; Zimmermann, Stefan, Methods of joining metallic protective layers.
  20. Miller, Steven A.; Shekhter, Leonid N.; Zimmerman, Stefan, Methods of joining protective metal-clad structures.
  21. Gaydos, Mark E.; Kumar, Prabhat; Miller, Steve; Mills, Norman C.; Rozak, Gary; Wu, Rong-Chein Richard, Methods of making molybdenum titanium sputtering plates and targets.
  22. Gaydos, Mark; Kumar, Prabhat; Miller, Steven A.; Mills, Norman C.; Rozak, Gary; Wu, Rong-Chein Richard, Methods of making molybdenum titanium sputtering plates and targets.
  23. Volchko, Scott Jeffrey; Zimmermann, Stefan; Miller, Steven A.; Stawovy, Michael Thomas, Methods of manufacturing high-strength large-area sputtering targets.
  24. Loewenthal, William; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets.
  25. Miller, Steven A.; Dary, Francois-Charles; Gaydos, Mark; Rozak, Gary, Methods of manufacturing large-area sputtering targets by cold spray.
  26. Volchko, Scott Jeffrey; Loewenthal, William; Zimmermann, Stefan; Gaydos, Mark; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets using interlocking joints.
  27. Volchko, Scott Jeffrey; Loewenthal, William; Zimmermann, Stefan; Gaydos, Mark; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets using interlocking joints.
  28. Miller, Steven A.; Kumar, Prabhat; Wu, Rong-chein Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Methods of rejuvenating sputtering targets.
  29. Miller, Steven A.; Schmidt-Park, Olaf; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmerman, Stefan, Methods of rejuvenating sputtering targets.
  30. Rozak, Gary Alan; Gaydos, Mark E.; Hogan, Patrick Alan; Sun, Shuwei, Molybdenum containing targets for touch screen device.
  31. Rozak, Gary Alan; Gaydos, Mark E., Multi-block sputtering target and associated methods and articles.
  32. Rozak, Gary Alan; Gaydos, Mark E., Multi-block sputtering target and associated methods and articles.
  33. Rozak, Gary Alan; Gaydos, Mark E; Michaluk, Christopher, Multi-block sputtering target with interface portions and associated methods and articles.
  34. Wilhartitz, Peter; Sch?nauer, Stefan; Polcik, Peter, Process for manufacturing an evaporation source.
  35. Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein Richard, Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
  36. Miller, Steven A.; Shekhter, Leonid N.; Zimmerman, Stefan, Protective metal-clad structures.
  37. Le,Hien Minh Huu; Miller,Keith A.; Kieu,Hoa T.; Ngan,Kenny King Tai, Reducing particle generation during sputter deposition.
  38. Zhang,Wenjun, Sputter target and method for fabricating sputter target including a plurality of materials.
  39. Han, Gang; Murata, Hideo; Nakamura, Hideki, Sputtering target, method of making same, and high-melting metal powder material.
  40. Rozak, Gary Alan; Gaydos, Mark E.; Hogan, Patrick Alan; Sun, Shuwei, Touch screen device comprising Mo-based film layer and methods thereof.
  41. Watanabe, Koichi; Yabe, Yoichiro; Ishigami, Takashi; Watanabe, Takashi; Aoyama, Hitoshi; Kohsaka, Yasuo; Suzuki, Yukinobu, Tungsten sputtering target and method of manufacturing the target.
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