초록 ▼

The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the

The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.

대표청구항 ▼

[ We claim:] [1.]1. A method of making a mesoporous film comprising the steps of:(a) combining a silica precursor with an aqueous solvent, a catalyst and a surfactant into a precursor solution;(b) spin coating said precursor solution into a templated film;(c) removing said aqueous solvent, said cata

[ We claim:] [1.]1. A method of making a mesoporous film comprising the steps of:(a) combining a silica precursor with an aqueous solvent, a catalyst and a surfactant into a precursor solution;(b) spin coating said precursor solution into a templated film;(c) removing said aqueous solvent, said catalyst and said surfactant from said templated film to form a hydroxylated film; and(d) dehydroxylating said hydroxylated film to obtain said mesoporous film, said mesoporous film having a porosity that is disordered, said disorder being characterized by an absence of a major x-ray diffraction peak in the range of 2 to 6 degrees 2-theta.