초록 ▼

A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions o

A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions of the features on the integrated circuit device. The binder is an amorphous porous material that links the silicalite nanocrystals together, formed from a precursor which polymerizes on heating. The silicalite nanocrystals are supplied as a colloidal suspension or slurry. The slurry and binder precursor are spincoated onto a substrate and thermally treated to polymerize the binder precursor and drive off solvent in the slurry, forming the porous silicalite/binder material. The silicalite/binder porous material is readily integrated into standard damascene fabrication processes.

대표청구항 ▼

[ I claim:] [1.]1. An integrated circuit device comprising one or more dielectric layers, wherein at least one of said one or more dielectric layers comprises silicalite crystals. [11.]11. A method of making a porous insulating layer as part of an integrated circuit device, the method comprising:dep

[ I claim:] [1.]1. An integrated circuit device comprising one or more dielectric layers, wherein at least one of said one or more dielectric layers comprises silicalite crystals. [11.]11. A method of making a porous insulating layer as part of an integrated circuit device, the method comprising:depositing a binder precursor and a slurry comprising silicalite crystals and one or more solvents on a substrate; andheating the substrate wherein the binder precursor forms a porous solid material containing silicalite crystals.12. The method of claim 11 wherein the integrated circuit device has features of a critical dimension and wherein an average size of a longest axis of the silicalite crystals is no greater than about 20% of the critical dimension.13. The method of claim 12 wherein no more than a negligible number of the silicalite crystals have the longest axis greater than about 40% of the critical dimension.14. The method of claim 11 wherein the slurry comprises the binder precursor.15. The method of claim 11 wherein the binder precursor is mixed with the slurry immediately before the slurry is deposited on the substrate.16. The method of claim 11 wherein the binder precursor is in a binder precursor solution and the slurry and the binder precursor solution are deposited separately on the substrate.17. The method of claim 11 wherein the slurry is a colloidal suspension.18. The method of claim 11 wherein the binder precursor is selected from the group consisting of tetraethoxysilane, tetramethoxysilane, hydridosilsesquioxanc, methylsilsesquioxane, poly(arylene ether) polymers and benzocyclobutene polymers.19. The method of claim 11 further comprising exposing the solid porous material containing silicalite crystals to an agent selected from the group consisting of hexamethyldisilazane, hexaphenyldisilazane, and dichlorodimethylsilane.