초록 ▼

Resist developers can attack some advanced dielectric materials such as silsesquioxane materials which can be used as an insulator between a surface of an integrated circuit chip and wiring layers formed on the surface of the dielectric material. By performing a resist stripping or etching process i

Resist developers can attack some advanced dielectric materials such as silsesquioxane materials which can be used as an insulator between a surface of an integrated circuit chip and wiring layers formed on the surface of the dielectric material. By performing a resist stripping or etching process in which a reactant material is supplied externally or liberated from the dielectric material, an extremely thin surface protective covering of an intermediate material may be formed which is impervious to resist developers or any of a plurality of other materials which may damage the flowable oxide material. A dual Damascene process for forming robust connections and vias to the chip can thus be made compatible with advanced dielectrics having particularly low dielectric constants to minimize conductor capacitance and support fast signal propagation and noise immunity even where conductors are closely spaced to each other.

대표청구항 ▼

[ Having thus described our invention, what we claim as new and desire to secure by Letters Patent is as follows:] [1.]1. A method of forming a semiconductor device including steps offorming a pattern of resist on a surface of a material,removing a portion of said material in accordance with said pa

[ Having thus described our invention, what we claim as new and desire to secure by Letters Patent is as follows:] [1.]1. A method of forming a semiconductor device including steps offorming a pattern of resist on a surface of a material,removing a portion of said material in accordance with said pattern of resist while forming an intermediate material at an exposed surface of said material as said material is removed, said intermediate material being substantially impervious to a selected material,forming a further pattern of resist on a surface of said intermediate material, andremoving a portion of said intermediate material and a further portion of said material in accordance with said further pattern of resist.