초록 ▼

The apparatus provides a temperature controlled environment for processing semiconductor wafers at elevated temperatures. A hot wall process chamber is used for the process steps. The process chamber includes three zones with independent temperature control capabilities. The apparatus is capable of

The apparatus provides a temperature controlled environment for processing semiconductor wafers at elevated temperatures. A hot wall process chamber is used for the process steps. The process chamber includes three zones with independent temperature control capabilities. The apparatus is capable of rotating the wafer in addition to providing a gas flow velocity gradient above the wafer for improved temperature and processing uniformity results.

대표청구항 ▼

[ What is claimed is:] [1.]1. An apparatus for thermally processing a semiconductor wafer, the apparatus comprising:a housing, the housing having a port for loading and unloading the wafer, the housing having a purge gas inlet port and a purge gas exit port for flowing a purge gas through the housin

[ What is claimed is:] [1.]1. An apparatus for thermally processing a semiconductor wafer, the apparatus comprising:a housing, the housing having a port for loading and unloading the wafer, the housing having a purge gas inlet port and a purge gas exit port for flowing a purge gas through the housing;a process chamber contained in the housing, the process chamber having a port for loading and unloading the wafer, the process chamber comprising a wafer support for holding the wafer;a plurality of heating elements disposed within the housing, the heating elements being arranged so as to apply heat to the exterior of the process chamber;at least one heat shield disposed between at least one of the heating elements and the housing;a temperature control system for controlling the heating elements to substantially maintain the wafer at a thermal processing temperature; andwherein the process chamber includes a preprocess zone and a process zone, the temperature control system being capable of independently controlling preselected temperatures for the preprocess zone and the process zone so that each zone can be maintained at an independent temperature.