초록 ▼

A bonded SOI substrate is disclosed using a transparent electrode without causing generation of a leakage current by light in semiconductive devices formed on the substrate when light is incident on the rear face of the substrate, resulting in decreased deterioration of device characteristics and ma

A bonded SOI substrate is disclosed using a transparent electrode without causing generation of a leakage current by light in semiconductive devices formed on the substrate when light is incident on the rear face of the substrate, resulting in decreased deterioration of device characteristics and malfunction. A shielding layer is formed between a transparent supporting substrate and a single-crystal silicon layer of an SOI substrate that can shield light incident on the rear face of the substrate. The light shielding layer is preliminarily formed on the supporting substrate prior to bonding of the single-crystal silicon layer to the supporting substrate in an SOI production process by a bonding method.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of making an SOI substrate comprising:providing a transparent supporting substrate,forming a light shielding layer above one surface of the supporting substrate,patterning the light shielding layer so as to cover at least a channel region of a transistor device

[ What is claimed is:] [1.]1. A method of making an SOI substrate comprising:providing a transparent supporting substrate,forming a light shielding layer above one surface of the supporting substrate,patterning the light shielding layer so as to cover at least a channel region of a transistor device,forming an insulating layer above the light shielding layer,planarizing a surface of the insulating layer,bonding a single-crystal silicon layer to the planarized surface of the insulating layer, andpatterning the single-crystal silicon layer.