초록 ▼

The present invention provides a method for fabricating an integrated circuit (IC) structure having an Al contact in electrical communication with Cu wiring embedded in the initial semiconductor wafer. In accordance with the method of the present invention, the Al contact is formed in areas of the I

The present invention provides a method for fabricating an integrated circuit (IC) structure having an Al contact in electrical communication with Cu wiring embedded in the initial semiconductor wafer. In accordance with the method of the present invention, the Al contact is formed in areas of the IC structure which contain or do not contain an underlying region of Cu wiring. The present invention also provides a method of interconnecting the fabricated structure to a semiconducting packaging material through the use of a wirebond or Controlled Collapse Chip Connection (C4) solder.

대표청구항 ▼

[ Having thus described our invention, what we claim as new, and desire to secure Letters Patent is:] [1.]1. An IC structure containing an Al contact in electrical communication with underlying Cu wiring comprising an IC semiconductor wafer having Cu wiring embedded therein, a first passivating laye

[ Having thus described our invention, what we claim as new, and desire to secure Letters Patent is:] [1.]1. An IC structure containing an Al contact in electrical communication with underlying Cu wiring comprising an IC semiconductor wafer having Cu wiring embedded therein, a first passivating layer on top of said semiconductor wafer having terminal via openings therein so as to expose said Cu wiring; a barrier layer on at least said exposed Cu wiring, sidewalls of the terminal via openings and on the passivating layer near the terminal via openings; an Al stack on said barrier layer; and a second passivating layer on said Al stack having openings therein exposing the Al stack covering said Cu wiring.