초록 ▼

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI s

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.

대표청구항 ▼

1. A method of fabricating a semiconductor device, said method comprising the steps of:preparing a single crystal semiconductor substrate having a main surface of a {110} surface; forming an oxide layer in the single semiconductor substrate; forming a hydrogen-containing layer at a predetermined dep

1. A method of fabricating a semiconductor device, said method comprising the steps of:preparing a single crystal semiconductor substrate having a main surface of a {110} surface; forming an oxide layer in the single semiconductor substrate; forming a hydrogen-containing layer at a predetermined depth in the single crystal semiconductor substrate by adding hydrogen into the single semiconductor substrate from a side of the main surface through the oxide layer; bonding the single crystal semiconductor substrate and a supporting substrate to each other; separating the single crystal semiconductor substrate by a first heat treatment along the hydrogen-containing layer; carrying out a second heat treatment at a temperature of 900 to 1200.degree. C.; polishing a single crystal semiconductor layer remaining on the supporting substrate and having a main surface of a {110} plane; and forming at least one thin film transistor using the single crystal semiconductor layer as an active layer thereof.