초록 ▼

A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define

A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

대표청구항 ▼

1. A process for forming films of material from a substrate, said process comprising steps of:introducing first particles through a surface of the substrate to a first selected depth underneath said surface, said first particles being at a first concentration at said first selected depth to define a

1. A process for forming films of material from a substrate, said process comprising steps of:introducing first particles through a surface of the substrate to a first selected depth underneath said surface, said first particles being at a first concentration at said first selected depth to define a first layer of substrate material to be removed above said first selected depth and to define a first remaining portion of substrate material below said first selected depth; freeing said first layer of substrate material from the substrate to form a cleaved surface on said substrate, including increasing a global stress at said first selected depth without initiating a cleaving action and, subsequent to said step of increasing, applying energy to a selected region of said substrate to initiate said cleaving action in a controlled fashion thus separating said first layer from said substrate; introducing second particles through said cleaved surface of said substrate to a second selected depth underneath said cleaved surface, said second particles being at a second concentration at said second selected depth to define a second layer of substrate material to be removed above said second selected depth and to define a second remaining portion of substrate material below said second selected depth; and freeing said second layer of substrate material from the substrate.