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Method for improving performance of organic semiconductors in bottom electrode structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-035/24
출원번호 US-0434365 (1999-11-05)
발명자 / 주소
  • Christos Dimitrios Dimitrakopoulos
  • Ioannis Kymissis
  • Sampath Purushothaman
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Scully, Scott, Murphy & Presser
인용정보 피인용 횟수 : 89  인용 특허 : 3

초록

A method for improving the performance of an organic thin film field effect transistor comprising the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, w

대표청구항

1. An organic thin film transistor comprising at least bottom source/drain electrodes having an organic semiconductor formed over said bottom source/drain electrodes, wherein said bottom source/drain electrodes have a self-assembled monolayer formed thereon, said self-assembled monolayer comprising

이 특허에 인용된 특허 (3)

  1. Tanaka Toshihiko,JPX ; Doi Syuji,JPX ; Koezuka Hiroshi,JPX ; Tsumura Akira,JPX ; Fuchigami Hiroyuki,JPX, Method of making a field effect transistor.
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  3. Haddon Robert Cort (Dover NJ) Hebard Arthur Foster (Bernardsville NJ) Palstra Thomas Theodorus Marie (New Providence NJ), N-channel field effect transistor including a thin-film fullerene.

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