초록 ▼

A controlled, switched laser system for vaporizing a target structure on a substrate includes a diode-pumped, solid-state laser for producing a laser output, a controllable switch for controlling the on/off state and power level of the laser, and a wavelength shifter. The wavelength shifter shifts t

A controlled, switched laser system for vaporizing a target structure on a substrate includes a diode-pumped, solid-state laser for producing a laser output, a controllable switch for controlling the on/off state and power level of the laser, and a wavelength shifter. The wavelength shifter shifts the wavelength of the laser output from a conventional wavelength to a wavelength beyond the absorption edge of the substrate but shorter than 1.2 .mu.m in order to obtain a decrease in absorption of the laser output by the substrate due to the shift in the wavelength of the laser output. The wavelength shifter is removably insertable into the switched laser system so as to enable the switched laser system to operate at the conventional wavelength and at the wavelength beyond the absorption edge of the substrate. Heating of the substrate and hence damage to the substrate is limited due to the wavelength being beyond the absorption edge of the substrate. Good depth of focus of the laser beam output is maintained relative to spot size of the laser beam output due to the wavelength being less than about 1.2 .mu.m.

대표청구항 ▼

1. A controlled, switched laser system for vaporizing and removing a target link structure on a silicon substrate, comprising:a diode-pumped, solid-state laser; a controllable switch for controlling the on/off state and power level of the laser; a computer programmed to control the solid-state laser

1. A controlled, switched laser system for vaporizing and removing a target link structure on a silicon substrate, comprising:a diode-pumped, solid-state laser; a controllable switch for controlling the on/off state and power level of the laser; a computer programmed to control the solid-state laser to cause the solid-state laser to produce a laser beam output having an output pulse width less than 8 nanoseconds at an operating repetition rate of 5 kilohertz or higher, the computer being programmed to cause the laser beam output to be directed at the target link structure on the silicon substrate to vaporize and remove the target link structure; and a wavelength shifter for shifting the wavelength of the laser output from a wavelength that is not beyond the absorption edge of the silicon substrate to a wavelength beyond the absorption edge of the silicon substrate but shorter than 1.2 .mu.m in order to obtain a decrease in absorption of the laser output by the substrate due to the shift in the wavelength of the laser output, whereby heating of the silicon substrate and hence damage to the silicon substrate is limited due to the wavelength remaining beyond the absorption edge of the silicon substrate.