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Semiconductor device and method for manufacturing the same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/84
  • H01L-021/00
  • H01L-021/20
  • H01L-021/36
출원번호 US-0439997 (1999-11-15)
우선권정보 JP-0350545 (1992-12-04); JP-0204775 (1993-07-27)
발명자 / 주소
  • Hongyong Zhang JP
  • Hideki Uochi JP
  • Toru Takayama JP
  • Takeshi Fukunaga JP
  • Yasuhiko Takemura JP
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. JP
대리인 / 주소
    Nixon Peabody LLP
인용정보 피인용 횟수 : 53  인용 특허 : 99

초록

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, parad.ium, osmium, iridium, platinu

대표청구항

1. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film comprising amorphous silicon over a substrate; forming a metal layer on said semiconductor film by sputtering; heating said semiconductor film and said metal layer so that a portion of said meta

이 특허에 인용된 특허 (99)

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