초록 ▼

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1.ltoreq.x.ltoreq.5, to deposit a dielectric layer with no photoresist "footing", a low dielectric constant,

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1.ltoreq.x.ltoreq.5, to deposit a dielectric layer with no photoresist "footing", a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist "footing".

대표청구항 ▼

1. A process for depositing a dielectric layer in a chemical vapor deposition (CVD) chamber, comprising:providing a semiconductor substrate in said CVD chamber; introducing a precursor gas into said CVD chamber; introducing a CO2-containing gas into said CVD chamber; and depositing said dielectric l

1. A process for depositing a dielectric layer in a chemical vapor deposition (CVD) chamber, comprising:providing a semiconductor substrate in said CVD chamber; introducing a precursor gas into said CVD chamber; introducing a CO2-containing gas into said CVD chamber; and depositing said dielectric layer using a CVD process at a deposition temperature of approximately 425.degree. or less.